Results 91 to 100 of about 900,366 (207)

Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices

Advanced Electronic Materials
Orbitronics is an emerging domain within spintronics, and it is characterized by a rapid development of methods for utilizing orbital current. Metals with strong spin‐orbit coupling have been effectively used to convert orbital current into orbital ...
Junwen Wei, Xinkai Xu, Zijin Lin, Yuanjing Qu, Xiaoli Tang, Zhiyong Zhong, Huaiwu Zhang, Lichuan Jin   +7 more
doaj   +1 more source

Reversible strain-induced spin–orbit torque on flexible substrate

, 2021
We propose the use of mechanical strain and mild annealing to achieve reversible modulation of spin-orbit torque (SOT) and Gilbert damping parameter.
Seet, Chim Seng, Wong, Grayson Dao Hwee, Grayson Dao Hwee Wong, Weiliang Gan, Wen Siang Lew, Wai Cheung Law, Chim Seng Seet, Feng Xu, Gan, Weiliang, Xu, Zhan, Lew, Wen Siang, Zhan Xu, Law, Wai Cheung, Xu, Feng, Ang, Calvin Ching Ian, Calvin Ching Ian Ang   +15 more
core   +1 more source

Large spin-orbit torque in a-plane $\alpha$-Fe$_{2}$O$_{3}$/Pt bilayers [PDF]

Realization of efficient spin-orbit torque switching of the N\'eel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects.
Zhang, Hantao, Yang, Fengyuan, Michel, Justin, Kawakami, Roland K., Russell, Daniel, Cheng, Ran, Lyalin, Igor   +6 more
core   +1 more source

Spin-orbit torque MRAM performance with different materials

Materials Research Express
spin–orbit torque (SOT) technology has emerged as a promising approach for developing advanced magnetic devices with superior performance metrics. The SOT enables efficient control of magnetic states through the generation of spin currents via spin–orbit
Piyush Tankwal, M Shashidhara, Abhishek Acharya, Sandeep Singh Chauhan, Satyendra Kumar Mourya, Vikas Nehra   +5 more
doaj   +1 more source

Efficiency of Spin-Transfer Torque-Assisted Spin-Orbit Torque Magnetization Switching Under In-Plane External Field Application [PDF]

We have simulated the magnetization dynamics under implementing spin-transfer torque (STT) and spin-orbit torque (SOT) simultaneously, which is regarded as the writing process of the next-generation 3-D domain wall magnetic memory (3D-DWMM).
Kato, Takeshi, Pan, Da, Oshima, Daiki
core   +1 more source

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature [PDF]

, 2016
Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications.
Schuh, Dieter, Decker, Martin, Weiss, Dieter, Islinger, Robert, Chen, Lin, Gmitra, Martin, Chen, L., Bougeard, Dominique, Kronseder, Matthias, Back, Christian, Back, Christian H., Fabian, Jaroslav   +11 more
core   +1 more source

Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque

Advanced Electronic Materials
The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an ...
He Bai, Jialiang Li, Jintao Ke, Qixun Guo, Zhaozhao Zhu, Yaqin Guo, Xiao Deng, Dan Liu, Jianwang Cai, Tao Zhu   +9 more
doaj   +1 more source

The Rhythmic and the Metronomic: On Charlie Chaplin's Gait

Critical Quarterly, EarlyView.
Matthew Beaumont
wiley   +1 more source

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

Nature Communications
The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with ...
Lakhan Bainsla, Bing Zhao, Nilamani Behera, Anamul Md. Hoque, Lars Sjöström, Anna Martinelli, Mahmoud Abdel-Hafiez, Johan Åkerman, Saroj P. Dash   +8 more
doaj   +1 more source

High write endurance up to 1012 cycles in a spin current-type magnetic memory array

AIP Advances, 2019
We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array.
Yohei Shiokawa, Eiji Komura, Yugo Ishitani, Atsushi Tsumita, Keita Suda, Yuji Kakinuma, Tomoyuki Sasaki   +6 more
doaj   +1 more source