Results 131 to 140 of about 900,366 (207)

Exploring Integrated Spin-Orbit Torque SOT-MRAM for Nonvolatile, Low Power, and Ultrafast Magnetic Memories

There is considerable interest in electrically controlling nano-magnets in order to develop non-volatile magnetic memories (MRAM) [1]. Most advanced MRAM devices are magnetic tunnel junctions (MTJ) that consist of two ferromagnetic layers separated by a very thin oxide barrier, one of the layer being the storage layer, the other is used as reference ...
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Fully reversible electric-field control of magnetization in Fe₃GaTe₂/CuInP₂S₆ heterostructure. [PDF]

Nat Commun
Gou J, Hou G, An Y, Wu S, Zhao M, Shao Y, Ma W, An M, Zhu T, Ji Y, Wang P, Xu Z, Nie A, Xie Y, Jia Z, Wang Z, Zhang D, Jiang Y.   +17 more
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Electrical control of exchange bias in sub-10 nm regime enabled by single-nanotube patterning. [PDF]

Nat Commun
Li H, Zhang K, Zhang Z, Zhou D, Wang S, Yao Y, Du A, Zhu D, Guo Z, Cheng S, Lu S, Jiang K, Zhao W.   +12 more
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High-Accuracy, High-Performance In-Memory Computing With High-Resistance Spin-Orbit Torque (SOT) Magnetic Memory

IEEE Transactions on Electron Devices
F. Carletti, M. Y. Song, E. Ambrosi, C. Y. Hu, C. F. Hsu, P. Mannocci, G. L. Chen, I. J. Wang, K. M. Chen, Y. C. Hsin, M. Farronato, X. Y. Bao, D. Ielmini   +12 more
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A spin-orbit torque-based key generation system with key concealment and attack detection through irreversible physical changes. [PDF]

Sci Adv
Xu Y, Duan W, Wu H, Wang Y, Qin T, Zhang S, Guo Z, Wan M, Song M, You L.   +9 more
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Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing. [PDF]

Nanomaterials (Basel)
Song M, Liu J, Zhu Z.
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Energy-efficient field-free switching by orbital torque and spin-reorientation. [PDF]

Nat Commun
Jamshed B, Das S, Mishra PK, Mah WLW, Kläui M, Piramanayagam SN.   +5 more
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Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]

Sci Adv
Liu S, Rogers V, Hu CY, Song MY, Bao X, Incorvia JAC.   +5 more
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EL-RAKHAWI ARCHITECTURE FOR REVERSIBLE, TOPOLOGICALLY PROTECTED NEUROMORPHIC COMPUTING VIA SPIN-ORBIT TORQUE IN 2D MATERIALS (RTN-SOT)

EL-RAKHAWI ARCHITECTURE RTN-SOT: POST-SILICON NEUROMORPHIC COMPUTING Author: Dr. Mohamed Kamal Arafa El-RakhawiDOI: 10.5281/zenodo.23334146 A revolutionary neuromorphic computing architecture breaking the Landauer energy barrier through integration of three proven phenomena: quasi-adiabatic magnetization switching, spin-orbit torque (SOT) with ...
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Bulk Spin-Orbit Torque-Driven Spin Hall Nano-Oscillators Using PtBi Alloys with Engineered Crystallinity. [PDF]

ACS Appl Mater Interfaces
Shashank U, Kumar A, Parvini TS, Heyen H, Zeng L, Yankovich AB, Choi JG, Rajabali M, Olsson E, Münzenberg M, Åkerman J.   +10 more
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