Results 161 to 167 of about 793 (167)

Integration scheme for three terminal spin-orbit-torque (SOT) switching devices

HAQ JESMIN, ZHONG TOM, THOMAS LUC, TENG ZHONGJIAN, SHEN DONGNA   +4 more
openaire   +1 more source

SHARED SOURCE LINE ARCHITECTURES OF PERPENDICULAR HYBRID SPIN-TORQUE TRANSFER (STT) AND SPIN-ORBIT TORQUE (SOT) MAGNETIC RANDOM ACCESS MEMORY

2018
LI SHAOPING, TSAI HONG
openaire   +1 more source

Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data

2020
PARK CHANDO, KIM SUNGRYUL, KANG SEUNG HYUK   +2 more
openaire   +1 more source

DEEP NEURAL NETWORK DEVICE BASED ON DUAL SPIN ORBIT TORQUE (SOT) DEVICES

LE QUANG, LIU XIAOYONG, YORK BRIAN R, TAKANO HISASHI, PHAM NAM HAI   +4 more
openaire   +1 more source

Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials

LE QUANG, LIU XIAOYONG, HWANG CHERNGYE, YORK BRIAN R, LE SON T, BANH SHARON SWEE LING, MAEDA MAKI, TUO FAN, TAO YU, TAKANO HISASHI, PHAM NAM HAI   +10 more
openaire   +1 more source

Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line

FROUGIER JULIEN, HOUSSAMEDDINE DIMITRI, XIE RUILONG, CHENG KANGGUO   +3 more
openaire   +1 more source

Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)

FROUGIER JULIEN, HOUSSAMEDDINE DIMITRI, XIE RUILONG, CHENG KANGGUO, RIZZOLO MICHAEL   +4 more
openaire   +1 more source