Results 101 to 110 of about 2,735,759 (291)
Spin orbit torque non-volatile flip-flop for high speed and low energy applications
, 2014 International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered.
Prenat, Guillaume +3 more
core +1 more source
Controllable spin-transfer torque on an antiferromagnet in a dual spin-valve [PDF]
, 2011 We consider current-induced spin-transfer torque on an antiferromagnet (AFM) in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a current-
Linder, Jacob, Jacob Linder
core +1 more source
Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications
Advanced Materials, EarlyView.Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko +2 more
wiley +1 more source
High write endurance up to 1012 cycles in a spin current-type magnetic memory array
AIP Advances, 2019 We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array.
Yohei Shiokawa +6 more
doaj +1 more source
Spin transfer torque enhancement in dual spin valves in the ballistic regime
, 2011 The spin transfer torque in an all-metal dual spin valve, in which two antiparallel-aligned pinned ferromagnetic layers are on the two sides of a free ferromagnetic layer with two thin normal metal spacers in between, is studied in the ballistic regime ...
Z. Z. Sun +5 more
core +1 more source
Atomic‐Scale Detection of Néel Vector Switching in the Single‐Layer A‐Type Antiferromagnet Cr2S3‐2D
Advanced Materials, EarlyView.Interfacial electron donation from graphene redistributes charge within single‐layer Cr2S3‐2D, preferentially accumulating at the lower Cr/S plane. The resulting minute magnetic imbalance lifts the equivalence of the two magnetic sublayers, enabling atomic‐resolution identification and field‐induced control of Néel‐vector states in a two‐dimensional A ...
Affan Safeer +11 more
wiley +1 more source
Spin-torque switching of a nano-magnet using giant spin hall effect
AIP Advances, 2015 The Giant Spin Hall Effect(GSHE) in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic ...
Ashish V. Penumatcha +3 more
doaj +1 more source
Advanced Materials, EarlyView.Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho +6 more
wiley +1 more source
A physical unclonable function based on variations of write times in STT-MRAM due to manufacturing defects [PDF]
AIP AdvancesA physical unclonable function (PUF) utilizes the unclonable random variations in a device’s responses to a set of inputs to produce a unique “biometric” for authentication.
Jacob Huber, Supriyo Bandyopadhyay
doaj +1 more source
Voltage Dependence of Spin Transfer Torque In Magnetic Tunnel Junctions [PDF]
, 2008 Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of nonequilibrium Green functions formalism are presented.
W. H. Butler +4 more
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