Results 81 to 90 of about 2,882,123 (290)

Magnetization dynamics with a spin-transfer torque [PDF]

open access: yesPhysical Review B, 2003
15 ...
Li, Z., Zhang, S.
openaire   +2 more sources

Architected Bio‐Based Iontronic Skin With Dual‐Mode Pressure and Strain Sensing

open access: yesAdvanced Functional Materials, EarlyView.
Bio‐based acrylates in combination with an ionic liquid create 3D‐printed ionogels with compositionally tuneable mechanics and ionic conductivity. Gyroid architectures amplify low‐pressure sensitivity while preserving robust strain sensing, enabling dual‐mode detection of pressure and deformation.
Maksims Jurinovs   +8 more
wiley   +1 more source

Microscopic derivation of spin-transfer torque in ferromagnets

open access: yesPhysical Review B, 2013
Spin-transfer torque (STT) provides key mechanisms for current-induced phenomena in ferromagnets. While it is widely accepted that STT involves both adiabatic and non-adiabatic contributions, their underlying physics and range of validity are quite controversial.
Cheng, Ran, Niu, Qian
openaire   +2 more sources

Spin Transfer Torque in a Graphene Lateral Spin Valve Assisted by an External Magnetic Field

open access: yes, 2016
Spin-based devices are widely discussed for post-complementary metal–oxide–semiconductor (CMOS) applications. A number of spin device ideas propose using spin current to carry information coherently through a spin channel and transfering it to an output ...
Vinh Quang Diep (1886095)   +5 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Research Update: Spin transfer torques in permalloy on monolayer MoS2

open access: yesAPL Materials, 2016
We observe current induced spin transfer torque resonance in permalloy (Py) grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py.
Wei Zhang   +11 more
doaj   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

open access: yesAdvanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena   +3 more
wiley   +1 more source

Resonant Domain Wall Dynamics in a Three‐Dimensional Magnetic Nano Double Helix

open access: yesAdvanced Materials, EarlyView.
3D magnetic nanostructures promise exciting possibilities for magnetization dynamics. However, experimental realizations remain scarce. In nanoprinted cobalt double helices, time‐resolved X‐ray microscopy reveals harmonic domain wall dynamics. Simulations identify the mode and additional higher‐frequency resonances, revealing a rich dynamic landscape ...
Pamela Morales‐Fernández   +15 more
wiley   +1 more source

Spintronics and magnetic memory devices

open access: yesAdvances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi   +6 more
doaj   +1 more source

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