Results 81 to 90 of about 85,154 (304)

Magnetic properties of Co film in Pt/Co/Cr2O3/Pt structure

AIP Advances, 2020
Magnetic properties of Co film in Pt/Co/α-Cr2O3/Pt/α-Al2O3 structure were investigated. Co layer thickness tCo dependence of perpendicular magnetic anisotropy energy density K reveals that the bulk magnetic anisotropy plays an important role in the ...
T. V. A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, Y. Endo   +5 more
doaj   +1 more source

Spintronics?

, 2004
This is a brief review of spin physics in semiconductors, as well as of the historic roots of the recent very active research of spin-related phenomena. The perspectives of "spintronics" are also discussed.
openaire   +3 more sources

Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6

Advanced Functional Materials, EarlyView.
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl, Nicholas Clark, David G. Hopkinson, Matthew Hamer, Matthew Watson, Laxman Nagireddy, James E. Nunn, Alexei Barinov, Yichao Zou, William Thornley, Casey Cheung, Wendong Wang, Sam Sullivan‐Allsop, Xiao Li, Astrid Weston, Eli G. Castanon, Andrey V Kretinin, Cephise Cacho, Neil R. Wilson, Sarah J. Haigh, Roman Gorbachev   +20 more
wiley   +1 more source

The role of non-uniform magnetization texture for magnon–magnon coupling in an antidot lattice

Scientific Reports
We numerically study the spin-wave dynamics in an antidot lattice based on a Co/Pd multilayer structure with reduced perpendicular magnetic anisotropy at the edges of the antidots.
Mathieu Moalic, Mateusz Zelent, Krzysztof Szulc, Maciej Krawczyk   +3 more
doaj   +1 more source

Spin Injection into a Graphene Thin Film at Room Temperature

, 2007
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path.
Appelbaum, Fert, Heersche, Jedema, Masashi Shiraishi, Megumi Ohishi, Miwa, Novoselov, Novoselov, Ohno, Petta, Ryo Nouchi, Sahoo, Sakai, Takayuki Nozaki, Teruya Shinjo, Tombros, Tsukagoshi, Xiong, Yoshishige Suzuki, Zhang   +20 more
core   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

Magnetization switching driven by magnonic spin dissipation

Nature Communications
Efficient control of magnetization in ferromagnets is crucial for high-performance spintronic devices. Magnons offer a promising route to achieve this objective with reduced Joule heating and minimized power consumption.
Won-Young Choi, Jae-Hyun Ha, Min-Seung Jung, Seong Been Kim, Hyun Cheol Koo, OukJae Lee, Byoung-Chul Min, Hyejin Jang, Aga Shahee, Ji-Wan Kim, Mathias Kläui, Jung-Il Hong, Kyoung-Whan Kim, Dong-Soo Han   +13 more
doaj   +1 more source

Dirac spin gapless semiconductors: Ideal platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects

, 2016
It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices.
Wang, Xiao-lin
core   +1 more source

Antiferromagnetic spintronics [PDF]

, 2016
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics ...
V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, Y. Tserkovnyak   +5 more
semanticscholar   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source