Results 211 to 220 of about 124,690 (262)

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

open access: yesAdvanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo   +5 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

Electronic and magnetic properties of ZnO:Er(Ga) thin films. [PDF]

open access: yesRSC Adv
Das S   +6 more
europepmc   +1 more source

Fast Hydrogel Micro‐Actuators Driven by Electric Fields

open access: yesAdvanced Materials, EarlyView.
We report the fabrication of chemically programmable electroactuating microstructures through the first integration of two‐photon polymerization with electrically actuated gelatin methacrylate‐based hydrogels. By tailoring the charge of the polymer network, we demonstrate programmable polarity‐dependent bending, enabling microstructures that ...
Annaël Sort‐Montenegro   +6 more
wiley   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

open access: yesAdvanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park   +9 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

open access: yesAdvanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris   +7 more
wiley   +1 more source

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