Results 51 to 60 of about 99,590 (265)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Estudo vizando otimizar configurações de indução magnética para uso em um magnétron em reator de plasma [PDF]

, 2007
Dissertação [mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Ciência e Engenharia dos Materiais.As diferentes configurações de ímãs dentro do magnétron, para estudos em magnétron sputtering, têm ...
Wenginowicz, Agonir
core  

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Unified Analytic Formula for Physical Sputtering Yield at Normal Ion Incidence [PDF]

, 2001
A new analytic representation of the physical sputtering yield at normal ion incidence is derived providing a unified description of the sputtering data at all impact energies and for all ion-monoatomic-solid-target combinations.
RALCHENKO, Yu. V., JANEV, R.K., KENMOTSU, Takahiro   +2 more
core  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Energy Dependence of Ion-Induced Sputtering Yields from Monoatomic Solids at Normal Incidence [PDF]

, 1995
The yields of the ion-induced sputtering from monoatomic solids at normal incidence for various ion-target combinations are presented graphically as a function of the incident ion energy. In order to fill the lack of the experimental data. the sputtering
YAMAMURA, Yasunori, TAWARA, Hiro, TAWARA, Hiroyuki   +2 more
core  

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Calculation of Sputtering Yield with Obliquely Incident Light-Ions (H+, D+,, T+,, He+,) and its Representation by an Extended Semi-empirical Formula [PDF]

, 2012
With a Monte Carlo code ACAT, we have calculated sputtering yield of fifteen fusion-relevant mono-atomic materials (Be, B, C, Al, Si, Ti, Cr, Fe, Co, Ni, Cu, Zr, Mo, W, Re) with obliquely incident light-ions H+, D+, T+,, He+) at incident energies of 50 ...
ONO, M., SHIBATA, K., ONO, Tadayoshi, KAWAMURA, Takaichi, LI, Z., KENMOTSU, Takahiro   +5 more
core  

CO2 sensing properties of semiconducting copper oxide and spinel ferrite nanocomposite thin film [PDF]

, 2010
A new active layer for CO2 sensing based on semiconducting CuO–CuxFe3−xO4 (with 0 ≤ x ≤ 1) nanocomposite was prepared by radiofrequency sputtering from a delafossite CuFeO2 target using a specific in situ reduction method followed by post annealing ...
Chapelle, Audrey, Tailhades, Philippe, Oudrhiri-Hassani, Fahd, Presmanes, Lionel, Barnabé, Antoine   +4 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source