Results 91 to 100 of about 40,538 (255)

Microscopic mechanisms for the Fermi-liquid behavior of Nb-doped strontium titanate

, 2012
The relaxation rate in Nb-doped strontium titanate involving different scattering channels is investigated theoretically. It is demonstrated that the total relaxation rate in SrTiO_{3} is provided mainly by two mechanisms.
Devreese, J. T., Klimin, S. N., Tempere, J., van der Marel, D.   +3 more
core   +2 more sources

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

Advanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang, Jianmiao Guo, Jianmin Yan, Jialiang Wang, Chao Yun, Guang Zeng, Jie Li, Cong Wang, Zhengdao Xie, Yanglong Hou, Yang Chai   +10 more
wiley   +1 more source

Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

, 2006
Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method.
Butenko, A. V., Kahatabi, R., Sandomirsky, V., Schlesinger, Y., Sipatov, A. Yu., Volubuev, V. V.   +5 more
core   +1 more source

Meissner Effect and Nonreciprocal Charge Transport in Non‐Topological 1T‐CrTe2/FeTe Heterostructures

Advanced Materials, EarlyView.
This work demonstrates interface‐induced superconductivity (Tc ∼12 K) with a robust Meissner effect and pronounced nonreciprocal transport in epitaxial 1T‐CrTe2/FeTe heterostructures, where 1T‐CrTe2 is a 2D ferromagnet, and FeTe is an antiferromagnetic metal.
Zi‐Jie Yan, Ying‐Ting Chan, Wei Yuan, Annie G. Wang, Hemian Yi, Zihao Wang, Lingjie Zhou, Hongtao Rong, Deyi Zhuo, Ke Wang, John Singleton, Laurel E. Winter, Weida Wu, Cui‐Zu Chang   +13 more
wiley   +1 more source

Light emission and magnetic properties of aluminum films grown on SrTiO3 by molecular beam epitaxy

AIP Advances, 2016
Aluminum films were grown on SrTiO3 (100) substrates using a plasma-assisted molecular beam epitaxy system. We found that the intensity of defect emission coming through the Al films was enhanced to two fold.
Y. J. Wang, W. Q. Zhou, M. Meng, S. X. Wu, S. W. Li   +4 more
doaj   +1 more source

Magnetism, spin texture and in-gap states: Atomic specialization at the surface of oxygen-deficient SrTiO$_3$

, 2016
Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements performed on the two-dimensional electronic states confined near the (001) surface of SrTiO$_3$ in the presence of oxygen vacancies, we explore their spin structure by ...
Altmeyer, Michaela, Gabay, Marc, Hijano-Cubelos, Oliver, Jeschke, Harald O., Koepernik, Klaus, Lechermann, Frank, Martins, Cyril, Rozenberg, Marcelo J., Santander-Syro, Andres F., Valenti, Roser   +9 more
core   +3 more sources

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications

Advanced Materials, EarlyView.
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li, Yanran Liu, Jinjin Liu, Josephine Si Yu See, Kaijian Xing, Dong‐Chen Qi, Xiao Renshaw Wang   +6 more
wiley   +1 more source

In situ thermal preparation of oxide surfaces

APL Materials, 2020
Substrate surfaces terminated with a specific surface reconstruction are a prerequisite for the controlled epitaxial growth of most materials. Focusing on SrTiO3 (001) substrates, it has recently been shown that in situ substrate termination by thermal ...
Wolfgang Braun, Maren Jäger, Gennadii Laskin, Prosper Ngabonziza, Wolfgang Voesch, Pascal Wittlich, Jochen Mannhart   +6 more
doaj   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

Structural and dielectric properties of Sr$_{2}$TiO$_{4}$ from first principles

, 2003
We have investigated the structural and dielectric properties of Sr$_{2}$TiO$_{4}$,the first member of the Sr$_{n+1}$Ti$_{n}$O$_{3n+1}$ Ruddlesden-Popper series, within density functional theory.
A.R. James, C. LaSota, C. Noguera, C.-Z. Wang, Craig J. Fennie, D. Vanderbilt, D.M. Ceperley, E. Cockayne, F.W. Lytle, G. Burns, G. Burns, G. McCarthy, G.-M. Rignanese, G.-M. Rignanese, H. Rauh, H.B. Schlegel, H.J. Monkhorst, H.J. Monkhorst, J.H. Haeni, J.H. Sohn, J.H. Sohn, Karin M. Rabe, M. Posternak, M.A. McCoy, M.C. Payne, Na Sai, P.L. Wise, P.L. Wise, P.L. Wise, Ph. Ghosez, Ph. Ghosez, R.D. Shannon, R.J.D. Tilley, S. Baroni, S. Goedecker, S. Hyun, S.N. Ruddlesden, S.N. Ruddlesden, T. Nakamura, T. Suzuki, U. Venkateswaran, W. Kwestroo, W. Tian, W. Zhong, X. Gonze, X. Gonze, X. Gonze, X. Gonze, X. Zhao, X. Zhao   +49 more
core   +1 more source