Results 71 to 80 of about 41,120 (231)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface

, 2016
The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals.
Filippetti, A., Gariglio, S., Li, D., Marre', D., Pallecchi, I., Telesio, F., Triscone, J. -M.   +6 more
core   +2 more sources

Flexible Unusual Ternary‐Component Graded‐Modulus Dielectric Films with High‐Density Capacitive Energy Storage

Advanced Science, EarlyView.
Hierarchical PP–LSR107–BaTiO3 nanocomposite films are fabricated by one‐step extrusion and stretching for roll‐to‐roll manufacture, combining high energy storage and processing flexibility. LSR107 surrounds BaTiO3‐rich regions, locating amorphous PP, decreasing defects, and introducing deep traps that homogenize the electric field and suppress charge ...
Yi Gao, Xin‐Jie Wang, Lei Huang, Kun Xing, Baoquan Wan, Yan‐Hui Song, Jian‐Tao Wang, Li‐Juan Yin, Tong Liang, Yan Meng, Zunpeng Feng, Kai Huang, Ke Bi, Shao‐Long Zhong, Zhi‐Min Dang   +14 more
wiley   +1 more source

Photocatalytic Transfer Hydrogenation Using Plastic Hydrolysates as Hydrogen Donor

Angewandte Chemie, EarlyView.
Plastic waste is transformed into functional amines via solar‐driven transfer hydrogenation. Soluble monomers from acid hydrolysis of waste polymers serve as a hydrogen (electron/proton)donors in the selective reduction of nitroarenes using a visible light active photocatalyst consisting of cobalt promoted molybdenum disulfide integrated in cyanamide ...
Papa K. Kwarteng, Afreen H. Naceruddin, Erwin Reisner   +2 more
wiley   +2 more sources

Origin of the large phonon band-gap in SrTiO3 and the vibrational signatures of ferroelectricity in ATiO3 perovskite: First principles lattice dynamics and inelastic neutron scattering of PbTiO3, BaTiO3 and SrTiO3

, 2008
We report first principles density functional perturbation theory calculations and inelastic neutron scattering measurements of the phonon density of states, dispersion relations and electromechanical response of PbTiO3, BaTiO3 and SrTiO3.
A. W. Hewat, Alexander I. Kolesnikov, B. Dorner, Chun-Keung Loong, D. L. Price, Eric J. Walter, F. Jona, M. Ahart, M. E. Lines, Narayani Choudhury, V. G. Gavrilyachenko   +10 more
core   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

AIP Advances
LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and
Baocai Fan, Yichen Liu, Chen Fu, Zhaojun Lin, Sean Li   +4 more
doaj   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Atomic resolution microstructure study of Bi-doped SrTiO3

Journal of Advanced Dielectrics
Intrinsic SrTiO3 is a quantum paraelectric, but moderately Bi-doped SrTiO3 exhibits dielectric frequency dispersion similar to relaxor ferroelectrics. In this paper, detailed electron microscopic studies of the microstructures of Bi-doped SrTiO3 samples ...
Chao Li, Yijun Zhang, Guohua Dong, Guangliang Hu, Guang Yang, Chaoqiang Liu, Houwen Chen, Xiaoyong Wei   +7 more
doaj   +1 more source