Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
A General Static Random Access Memory Testing Method and Its Application
Yumei Liu +4 more
openalex +1 more source
A Scalable Perovskite Platform With Multi‐State Photoresponsivity for In‐Sensor Saliency Detection
A scalable in‐sensor computing platform (32 × 32 array) with ultra‐low variability is developed by incorporating ferroelectric copolymers into halide perovskite thin films. These devices achieve 1000 programmable photoresponsivity states and high thermal reliability.
Xuechao Xing +10 more
wiley +1 more source
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. [PDF]
Li X +6 more
europepmc +1 more source
Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell
Shuo Wang +5 more
openalex +1 more source
Plasmonic Nanomachines: Creating Local Potential Gradients and Motions
Plasmonic nanomachines can generate optical, thermal, and chemical potential gradients to drive directional rectilinear, rotational, and twisting motions at the nanometer scale. The integration of multimodal plasmonic forces with functional materials and programmed structural distortions enables precise spatiotemporal actuation, thereby providing a ...
Yoonhee Kim +3 more
wiley +1 more source
Cell Adhesion by Design: Engineering Tissue Culture Scaffolds With Adhesion Cues
ABSTRACT In scaffold‐based tissue engineering, the matrix should provide adequate adhesion cues for cell attachment, spreading, and function. Given the multitude of adhesion receptors and the diversity of scaffolds, there are many approaches to render scaffolds adhesive, even though they are not all equivalent.
Dalia Dranseike +3 more
wiley +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Mechanisms of Alpha Particle Induced Soft Errors in Nanoscale Static Random Access Memories
张战刚 +10 more
openalex +1 more source

