Results 261 to 270 of about 295,937 (324)

A robust and dynamic malware detection and classification model using behavioral-based analysis and BERT technique. [PDF]

PLoS One
Alhazmi AH.
europepmc   +1 more source

Dynamic Modeling and Analysis for Design of Memristive and Static Random Access Memories

, 2014
Yenpo Ho
openalex   +1 more source

Optimized CatBoost machine learning (OCML) for DDoS detection in cloud virtual machines with time-series and adversarial robustness. [PDF]

Sci Rep
Samy H, Bahaa-Eldin AM, Sobh MA, Taha A.
europepmc   +1 more source

Dynamic token encryption for preventing permission leakage in serverless architectures. [PDF]

PeerJ Comput Sci
Liu Y, Li F, Sun C.
europepmc   +1 more source

Deep learning predicts real-world electric vehicle direct current charging profiles and durations. [PDF]

Nat Commun
Li S, Zhang M, Doel R, Ross B, Piggott MD.   +4 more
europepmc   +1 more source

MH-1M: A 1.34 Million-Sample Multi-Feature Android Malware Dataset with Rich Metadata. [PDF]

Sci Data
Bragança H, Kreutz D, Rocha V, Assolin J, Feitosa E.   +4 more
europepmc   +1 more source

Coagulation Risk Prediction in Patients With Liver Failure: Integrated Meta-Analysis and Machine Learning Model Study.

JMIR Med Inform
Wang H, He T, Ren L, Zhang T.
europepmc   +1 more source

Design and Fabrication of Polycrystalline Material Thin-Film Transistors for Active Matrix Liquid-Crystal Display and Static Random Access Memory Applications

, 1995
Andrew J. Tang
openalex   +1 more source

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2D Materials‐Based Static Random‐Access Memory

Advanced Materials, 2022
Abstract2D transition‐metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)‐based field‐effect transistor (FET) and static random‐access memory (SRAM) cells analyzing the impact of layer thickness reveals that the ...
Chang‐Ju Liu, Yi Wan, Lain‐Jong Li, Chih‐Pin Lin, Tuo‐Hung Hou, Zi‐Yuan Huang, Vita Pi‐Ho Hu   +6 more
openaire   +2 more sources

High-speed GaAs static random-access memory

IEEE Transactions on Electron Devices, 1982
An 8-bit fully decoded RAM test circuit has been designed and fabricated using enhancement-mode GaAs-MESFET's with the LPFL circuit approach. Correct operation of the circuit has been observed for a supply voltage varying from 3.5 to 7 V. An access time of 0.6 ns was measured for a total power consumption of 85 mW under nominal operating conditions ...
G. Bert, J.-P. Morin, G. Nuzillat, C. Arnodo   +3 more
openaire   +1 more source