Results 271 to 280 of about 30,204 (293)
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Stability and Static Noise Margin Analysis of Static Random Access Memory

2007
The transistor mismatch can be described as two closely placed identical transistors have important differences in their electrical parameters as threshold voltage, body factor and current factor and make integrated circuit design and fabrication less predictable and controllable. Stability of a static random access memory (SRAM) is defined through its
openaire   +1 more source

One‐sided 10T static‐random access memory cell for energy‐efficient and noise‐immune internet of things applications

International Journal of Circuit Theory and Applications, 2023
Abdolreza Darabi   +2 more
exaly  

Radiation Tolerant by Design 12-transistor Static Random Access Memory

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022
Monalisa Pandey, Aminul Islam
openaire   +1 more source

Performance Modeling Sparse MTTKRP Using Optical Static Random Access Memory on FPGA

2022
Sasindu Wijeratne   +2 more
exaly  

Strategical Survey on Static Random Access Memory: A Bibilometric Study

2022 2nd International Conference on Intelligent Technologies (CONIT), 2022
Y. Alekhya, Umakanta Nanda
openaire   +1 more source

Static random access memory using high electron mobility transistors

IEEE Electron Device Letters, 1984
C P Lee, R J Anderson, D L Miller
exaly  

Enhanced security for static random access memory with armadillo Catboost

Integration
K. I. Ravikumar   +4 more
openaire   +1 more source

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