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Stability and Static Noise Margin Analysis of Static Random Access Memory
2007The transistor mismatch can be described as two closely placed identical transistors have important differences in their electrical parameters as threshold voltage, body factor and current factor and make integrated circuit design and fabrication less predictable and controllable. Stability of a static random access memory (SRAM) is defined through its
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Radiation Tolerant by Design 12-transistor Static Random Access Memory
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022Monalisa Pandey, Aminul Islam
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Performance Modeling Sparse MTTKRP Using Optical Static Random Access Memory on FPGA
2022Sasindu Wijeratne +2 more
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Strategical Survey on Static Random Access Memory: A Bibilometric Study
2022 2nd International Conference on Intelligent Technologies (CONIT), 2022Y. Alekhya, Umakanta Nanda
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Static random access memory using high electron mobility transistors
IEEE Electron Device Letters, 1984C P Lee, R J Anderson, D L Miller
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Enhanced security for static random access memory with armadillo Catboost
IntegrationK. I. Ravikumar +4 more
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