Results 261 to 270 of about 304,009 (317)

Cognitive effects of methamphetamine and amphetamine withdrawal in rodents: a systematic review. [PDF]

Front Psychol
Poorvii R, Mohamed IN, Yahaya MF, Azmi N, Lin TS, Mohamed RMP, Ugusman A, Shanmugam PK, Kumar J.   +8 more
europepmc   +1 more source

Dynamic Modeling and Analysis for Design of Memristive and Static Random Access Memories

, 2014
Yenpo Ho
openalex   +1 more source

Attractor-Based Models for Sequences and Pattern Generation in Neural Circuits. [PDF]

Neural Comput
Alvarez JL, Morrison K, Curto C.
europepmc   +1 more source

An Explainable Markov Chain-Machine Learning Sequential-Aware Anomaly Detection Framework for Industrial IoT Systems Based on OPC UA. [PDF]

Sensors (Basel)
Ghazi Y, Tabaa M, Ennaji M, Zaz G.
europepmc   +1 more source

Dynamic multi-objective aviation maintenance scheduling: an algorithmic framework. [PDF]

Sci Rep
Qi L, Lv C, Zhang T, Wang Y.
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

2D Materials‐Based Static Random‐Access Memory

Advanced Materials, 2022
Abstract2D transition‐metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)‐based field‐effect transistor (FET) and static random‐access memory (SRAM) cells analyzing the impact of layer thickness reveals that the ...
Chang‐Ju Liu, Yi Wan, Lain‐Jong Li, Chih‐Pin Lin, Tuo‐Hung Hou, Zi‐Yuan Huang, Vita Pi‐Ho Hu   +6 more
openaire   +4 more sources

A 128Kb CMOS static random-access memory

IBM Journal of Research and Development, 1991
This paper describes an all-CMOS 128Kb static random-access memory (SRAM) with emitter-coupled-logic (ECL) I/O compatibility which was designed for the air-cooled Enterprise System/9000™ processors. Access time of 6.5 ns is achieved using 0.5-µm channel length and 1.0-µm minimum geometry. Pipelining and self-resetting circuit techniques permit the chip
Jeff L. Chu, Hamid R. Torabi, Fred J. Towler   +2 more
openaire   +3 more sources

Ultraflexible Monolithic Three-Dimensional Static Random Access Memory

ACS Nano
Flexible static random access memory (SRAM) plays an important role in flexible electronics and systems. However, achieving SRAM with a small footprint, high flexibility, and high thermal stability has always been a big challenge. In this work, an ultraflexible six-transistor SRAM with high integration density is realized based on a monolithic three ...
Jiaona Zhang, Wanting Wang, Jiahao Zhu, Chunxiu Wang, Tianyu Zhu, Changbin Zhao, Jialiang Wang, Shengdong Zhang, Xinwei Wang, Kuan-Chang Chang, Hong Meng, Mansun Chan, Min Zhang   +12 more
openaire   +5 more sources

Testing static and dynamic faults in random access memories

Proceedings 20th IEEE VLSI Test Symposium (VTS 2002), 2003
The ever increasing trend to reduce DPM levels of memories requires tests with very high fault coverage. The important class of dynamic faults, therefore, cannot be ignored any more. It is shown that conventional memory tests constructed to detect static faulty behavior of a specific defect do not necessarily detect the dynamic faulty behavior. Indeed,
Said Hamdioui, Zaid Al-Ars, Ad J. van de Goor   +2 more
openaire   +1 more source