X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories [PDF]
This article has been accepted in a future issue of IEEE Transactions on Circuits and Systems-I: Regular ...
Amogh Agrawal +3 more
core +11 more sources
Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors [PDF]
Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption.
Muhtasim Ul Karim Sadaf +8 more
doaj +2 more sources
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. [PDF]
In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based on trap microdynamics and considered the influence of the self-heating effect.
Li X +6 more
europepmc +4 more sources
Performance evaluation of SRAM design using different field effect transistors [PDF]
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
doaj +1 more source
Performance Analysis Of SRAM and Dram in Low Power Application [PDF]
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S. +5 more
doaj +1 more source
Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing
Jiayu Yin, Wenli Liao, Chengying Chen
doaj +1 more source
An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
doaj +1 more source
Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors
Summary: Driven by technologies such as machine learning, artificial intelligence, and internet of things, the energy efficiency and throughput limitations of the von Neumann architecture are becoming more and more serious.
Fan Wang +7 more
doaj +1 more source
Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj +1 more source
In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics.
Sangik Choi +3 more
doaj +1 more source

