Results 1 to 10 of about 12,245 (196)

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories [PDF]

open access: yesIEEE Transactions on Circuits and Systems I: Regular Papers, 2018
This article has been accepted in a future issue of IEEE Transactions on Circuits and Systems-I: Regular ...
Amogh Agrawal   +3 more
core   +11 more sources

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors [PDF]

open access: yesNature Communications
Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption.
Muhtasim Ul Karim Sadaf   +8 more
doaj   +2 more sources

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. [PDF]

open access: yesMicromachines (Basel)
In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based on trap microdynamics and considered the influence of the self-heating effect.
Li X   +6 more
europepmc   +4 more sources

Performance evaluation of SRAM design using different field effect transistors [PDF]

open access: yesE3S Web of Conferences, 2023
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah   +5 more
doaj   +1 more source

Performance Analysis Of SRAM and Dram in Low Power Application [PDF]

open access: yesE3S Web of Conferences, 2023
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S.   +5 more
doaj   +1 more source

A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

open access: yesActive and Passive Electronic Components, 2023
Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing
Jiayu Yin, Wenli Liao, Chengying Chen
doaj   +1 more source

An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time

open access: yesApplied Sciences, 2022
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin   +4 more
doaj   +1 more source

Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors

open access: yesiScience, 2021
Summary: Driven by technologies such as machine learning, artificial intelligence, and internet of things, the energy efficiency and throughput limitations of the von Neumann architecture are becoming more and more serious.
Fan Wang   +7 more
doaj   +1 more source

Design of Static Random-Access Memory Cell for Fault Tolerant Digital System

open access: yesApplied Sciences, 2022
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj   +1 more source

One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

open access: yesScientific Reports, 2021
In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics.
Sangik Choi   +3 more
doaj   +1 more source

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