Results 151 to 160 of about 12,245 (196)

Monolithic 3D Oscillatory Ising Machine Using Reconfigurable FeFET Routing for Large-Scalability and Low-Power Consumption. [PDF]

open access: yesAdv Sci (Weinh)
Kim JP   +8 more
europepmc   +1 more source

Neural network compression for reinforcement learning tasks. [PDF]

open access: yesSci Rep
Ivanov DA   +3 more
europepmc   +1 more source
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Nano-optomechanical static random access memory (SRAM)

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2015
This paper reports an on chip nano-optomechanical SRAM, which is integrated with light modulation system on a single silicon chip. In particular, a doubly-clamped silicon beam shows bistability due to the non-linear optical gradient force generated from a ring resonator. The memory states are assigned with two stable deformation positions, which can be
B. Dong   +7 more
openaire   +1 more source

Performance analysis and design of optimized static random access memory (SRAM)

Microelectronics Journal, 1993
Abstract Achieving specific access time requirements while maintaining low area and power are important design goals for high-performance embedded Static RAMs. In this paper, we present a new design for the pre-charge circuit of an SRAM called ‘Power-Down Y-Controlled PMOS (PDYCP) load pre-charge’, which reduces power dissipation by a factor of three
Jahangir Dewan   +2 more
openaire   +1 more source

High performance radiation hardened static random access memory (SRAM) design for space applications

2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720), 2004
Static random access memory (SRAM) product for advanced space applications must demonstrate high performance to meet the ever increasing data rates of space systems and must be radiation hardened to ensure unfettered, reliable operation in the harsh environments of outer space. High performance and radiation hardness are not mutually exclusive.
S. Doyle   +5 more
openaire   +1 more source

Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET

2019 International Conference on IC Design and Technology (ICICDT), 2019
In this work, a comprehensive evaluation was performed for negative capacitance FinFET (NC-FinFET) based static random access memory (NC-SRAM) using the calibrated current-voltage relationship and dynamic behavior of NC-FinFETs that were experimentally demonstrated at 14-nm technology node.
Chen Sun, Kaizhen Han, Xiao Gong
openaire   +1 more source

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