Results 11 to 20 of about 12,245 (196)
IET Circuits, Devices & Systems, 2017 Soft errors in semiconductor memories occur due to charged particle strikes on sensitive nodes. Technology and voltage scaling increased dramatically the susceptibility of static random access memories (SRAMs) to soft errors. In this study, the authors present AS8‐SRAM, a new asymmetric memory cell that enhances the soft error resilience of SRAMs by ...
Ihsen Alouani +4 more
openaire +3 more sources
Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
Journal of Nanotechnology, 2020 The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy +3 more
doaj +1 more source
Improved reliability single loop single feed 7T SRAM cell for biomedical applications
Memories - Materials, Devices, Circuits and Systems, 2023 Portable biomedical devices are born to reach a maximum number of people at an effective cost, and because of their small size and battery operation, the impact of portable medical devices is huge.
Ashish Panchal +5 more
doaj +1 more source
A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process
Nanoscale Research Letters, 2017 This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu +4 more
doaj +1 more source
Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
doaj +1 more source
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano +3 more
core +1 more source
Investigating SRAM PUFs in large CPUs and GPUs [PDF]
, 2015 Physically unclonable functions (PUFs) provide data that can be used for cryptographic purposes: on the one hand randomness for the initialization of random-number generators; on the other hand individual fingerprints for unique identification of ...
Bernstein, Daniel J. +2 more
core +10 more sources
Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory
Sensors, 2023 This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in ...
Sangheon Lee +2 more
doaj +1 more source
Simulation Analysis and Performance Comparison for the Memory Cells [PDF]
Journal of Electrical and Electronics Engineering, 2021 Leakage power dissipation is an important concern in ultra-deep submicron (ultra-DSM) regime because of the scaling of the technology node. The designing of the efficient memory cell is mandatory for the today’s portable applications.
SHARMA Vijay Kumar
doaj
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]
, 2005 Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Asenov, A. +4 more
core +1 more source