Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT Applications
IEEE Access, 2023 The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical devices, and home automation systems.
Gadarapulla Rasheed +1 more
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A Low-Cost FPGA-Based Test and Diagnosis Architecture for SRAMs [PDF]
, 2009 The continues improvement of manufacturing technologies allows the realization of integrated circuits containing an ever increasing number of transistors. A major part of these devices is devoted to realize SRAM blocks.
Di Carlo, Stefano +5 more
core +1 more source
Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure
Sensors, 2020 Encryption is an important step for secure data transmission, and a true random number generator (TRNG) is a key building block in many encryption algorithms. Static random-access memory (SRAM) chips can be easily available sources of true random numbers,
Xu Zhang +9 more
doaj +1 more source
IEEE Access, 2013 In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar +3 more
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A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
Micromachines, 2022 A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability [PDF]
, 2014 In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-
Asenov, A. +4 more
core +1 more source
SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview
Micromachines, 2022 Microprocessors use static random-access memory (SRAM) cells in the cache memory design. As a part of the central computing component, their performance is critical.
Waqas Gul +2 more
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Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture [PDF]
Japanese Journal of Applied Physics, 2009 We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and ...
S. Yamamoto, S. Sugahara
openaire +2 more sources
The impact of random doping effects on CMOS SRAM cell [PDF]
, 2004 The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs.
Asenov, A., Cheng, B., Roy, S.
core +1 more source
Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
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