Results 61 to 70 of about 12,245 (196)

Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
This article proposes a novel magnetoelectric (ME) effect-based ternary content addressable memory (TCAM). The potential array-level write and search performances of the proposed ME-TCAM are studied using experimentally calibrated compact physical models
Siri Narla, Piyush Kumar, Ann Franchesca Laguna, Dayane Reis, X. Sharon Sharon, Michael Niemier, Azad Naeemi   +6 more
doaj   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, EarlyView.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source

Intrinsic chiroptical responsivity in self‐powered organic photodiodes for polarization‐tunable optical convolution

InfoMat, EarlyView.
Self‐powered chiral organic photodiodes function as polarization‐sensitive convolutional filters for circularly polarized light‐driven optical convolutional neural networks. This conceptually innovative architecture enables dynamic weight modulation, bias‐free operation, and exceptional noise resilience, boosting feature extraction fidelity from 0.15 ...
Lixuan Liu, Weilong Huang, Feihong Zhu, Yongjie Cai, Xiaolong Li, Yang Yang, Xiao Ma, Zhixiang Wei, Wei Chen, Huipeng Chen   +9 more
wiley   +1 more source

Design and analysis of single- ended robust low power 8T SRAM cell

MATEC Web of Conferences, 2016
This paper is based on the observation of 8T single ended static random access memory (SRAM) and two techniques for reducing the sub threshold leakage current, power consumption are examined.
Gupta Neha, Pahuja Hitesh
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Leakage power reduction techniques of 45 nm static random access memory (SRAM) cells

International Journal of the Physical Sciences, 2011
As the technology scales down to 90 nm and below, static random access memory (SRAM) standby leakage power is becoming one of the most critical concerns for low power applications. In this article, we review three major leakage current components of SRAM cells and also discuss some of the leakage current reduction techniques including body biasing ...
openaire   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

A Novel Approach to Design SRAM Cells for Low Leakage and Improved Stability

Journal of Low Power Electronics and Applications, 2018
The semiconductor electronic industry is advancing at a very fast pace. The size of portable and handheld devices are shrinking day by day and the demand for longer battery backup is also increasing. With these requirements, the leakage power in stand-by
Tripti Tripathi, Durg Singh Chauhan, Sanjay Kumar Singh   +2 more
doaj   +1 more source

Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques [PDF]

Iranian Journal of Electrical and Electronic Engineering, 2023
In today's technological environment, designing the Static Random Access Memory (SRAM) is most vital and critical memory devices. In this manuscript, two kinds of 5TSRAM are designed using different CNTFET such as Dual-ChiralityGate all around (GAA ...
G. S. Kumar, G. Mamatha
doaj  

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source