Results 71 to 80 of about 12,245 (196)
Different SRAM cell typologies includes 10T, 9T, 8T, and 7T in performance improvement and stability that enhances in specific regions as a trade-of. The count of the transistors have the possibility to be reduces to compensate certain area with the dynamic CMOS logic utilization that have the possibility in high performance maintenance.
Talawar, Ravi H., A. C., Ramachandra
openaire +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
VARIABILITY ANALYSIS OF 6T AND 7T SRAM CELL IN SUB-45NM TECHNOLOGY
This paper analyses standard 6T and 7T SRAM (static random access memory) cell in light of process, voltage and temperature (PVT) variations to verify their functionality and robustness.
Aminul Islam, Mohd. Hasan
doaj +1 more source
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott +6 more
core
ABSTRACT Cyclic executives (CEs) offer the advantage of ensuring complete determinism with minimal runtime overhead, often making them the preferred choice for safety‐critical real‐time systems. However, generating CEs for multicore processors while addressing task precedence and exclusion relations presents significant challenges.
Bruno Nogueira +4 more
wiley +1 more source
SecuCode: Intrinsic PUF Entangled Secure Wireless Code Dissemination for Computational RFID Devices
The simplicity of deployment and perpetual operation of energy harvesting devices provides a compelling proposition for a new class of edge devices for the Internet of Things.
Chesser, Michael +5 more
core +1 more source
Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo +3 more
wiley +1 more source
M3D-MDA: New scratchpad memory for enhancing GPU performance and energy efficiency
Applications in various fields, such as deep learning and scientific computing, naturally exhibit data access patterns along both the row and column dimensions of static random access memory (SRAM).
Cong Thuan Do
doaj +1 more source
S²RAM: Optimization of SRAM With Memory Access Patterns
This paper presents a static sequential-random-access memory (S2RAM) designed to enable low-power and high-performance operations for workloads involving sequential memory accesses.
Woong Choi
doaj +1 more source
ABSTRACT This paper presents the development and validation of a scalable platooning system based on the predecessor‐following (PF) topology, designed for low‐cost follower platforms. It integrates key technologies such as localization, path planning, profile generation, and low‐level control to create a practical solution.
Dongwoo Seo, Jinhee Lee, Jaeyoung Kang
wiley +1 more source

