Results 161 to 170 of about 20,283 (187)

Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors

Proceedings of the National Academy of Sciences, 2021
Significance Electrolyte-gated transistor (EGT)–based inverter circuits are the basic building blocks of next-generation flexible electronic devices. However, constructing high-performance complementary inverters is challenging due to the unbalanced electrical performances of available p- and n-type EGT semiconducting materials.
Yao Yao, Wei Huang, Jianhua Chen, Gang Wang, Hongming Chen, Xinming Zhuang, Yibin Ying, Jianfeng Ping, Tobin J. Marks, Antonio Facchetti   +9 more
openaire   +2 more sources

A Sub-0.5 V Differential ED-CMOS/SOI Circuit with Over-1-GHz Operation

IEICE Transactions on Electronics, 2005
This paper describes a speed-oriented ullralow-voltage and low-power SOI circuit technique based on a differential enhancementand depletion-mode (ED)-MOS circuit. Combining an ED-MOS circuit block for critical paths and a multi-V th CMOS circuit block for noncritical path, that is, the so-called differential ED-CMOS/SOI circuit, makes it possible to ...
Takakuni Douseki, Toshishige Shimamura, Nobutaro Shibata   +2 more
openaire   +1 more source

Super stack technique to reduce leakage power for sub 0.5-V supply voltage in VLSI circuits

International Conference on Sustainable Energy and Intelligent Systems (SEISCON 2011), 2011
Leakage current of CMOS circuits has become a major factor in very deep submicron regime. ITRS reports that leakage power dissipation is rapidly becoming a substantial contributor to the total power dissipation as threshold voltage becomes small. In this paper a leakage reduction technique named "Super stack"for sub 0.5-V supply voltage has been ...
T.G. Reddy, K. Suganthi
openaire   +1 more source

Sub 0.5-V bulk-driven winner take all circuit based on a new voltage follower

Analog Integrated Circuits and Signal Processing, 2016
A new solution for a bulk-driven ultra-low-voltage winner take all (WTA) circuit is described. The WTA structure is based on a new voltage follower (VF) circuit which could also be used in other applications as a general purpose precise VF for sub 0.5-V operation.
Tomasz Kulej, Fabian Khateb
openaire   +1 more source

A 0.5-V, 3-mW, 54×54-b multiplier with a triple-V/sub th/ CMOS/SIMOX circuit scheme

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), 2003
K. Fujii, T. Douseki
openaire   +1 more source

Design of DG FinFET based driver circuits for energy efficient sub threshold global interconnects

Analog Integrated Circuits and Signal Processing, 2022
Rupali Walunj
exaly  

A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA

IEEE Journal of Solid-State Circuits, 1996
Denis Flandre, P G A Jespers, F Silveira   +2 more
exaly  

Mixed body bias techniques with fixed V/sub t/ and I/sub ds/ generation circuits

IEEE Journal of Solid-State Circuits, 2005
K Fukuoka, S Sakiyama
exaly