Results 131 to 140 of about 109,369 (340)
Large-spot subthreshold transpupillary thermotherapy for chronic serous macular detachment
Giuseppe Lo Giudice1, Valentina de Belvis2, Marco Tavolato1, Alessandro Galan11San Paolo Ophthalmic Center, San Antonio Hospital, Padova, Italy; 2Paediatric Low Vision Center, Paediatric Rare Eye Disease Center, Department of Paediatrics, University of ...
Giuseppe Lo Giudice +3 more
core
Engineered heart tissues (EHTs) derived from human iPSCs replicate mechanisms of ventricular tachycardia at the tissue level. Acquired Long‐QT conditions cause early afterdepolarizations, wavebreak, and transient rotors; in contrast, focal cryoinjury forms a stable substrate that supports ongoing reentry.
Matthew Fiedler +4 more
wiley +1 more source
Negative‐gauge‐factor materials reverse the usual rule of piezoresistive sensing: their resistance falls, rather than rises, under deformation. This review organizes such behavior into four mechanistic classes spanning intrinsic semiconductors, composites, conducting polymers, and engineered architectures.
Su‐Hyeong Lee +2 more
wiley +1 more source
A Timing Error Detection Latch Using Subthreshold Source-Coupled Logic
Subthreshold source-coupled logic (STSCL) has been recently shown to be an advantageous logic style for ultra-low power applications. In the subthreshold region, STSCL provides improved power-delay performance and increased robustness over static CMOS ...
Laulajainen, Erkka +3 more
core +1 more source
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation ...
Wanjie Xu, Hei Wong, Hiroshi Iwai
doaj +1 more source
Global Variability of UTBB MOSFET in Subthreshold
Global variability of UTBB MOSFETs in subthreshold and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered.
F. Andrieu +12 more
core +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Background Although the association between depression and excess mortality has been well established, it is not clear whether this is greater in major depression than in subthreshold depression.
Vogelzangs, Nicole +6 more
core

