Results 121 to 130 of about 100,071 (296)

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

Advanced Electronic Materials, EarlyView.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves   +8 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
For self‐aligned top‐gate amorphous InGaZnO thin‐film transistors (TFTs), a capacitance‐voltage‐based extraction technique that directly reconstructs a lateral doping profile and key parameters is proposed. The extracted profiles are validated by direct comparison with the transfer‐length method.
Seung Joo Myoung, Chang Il Ryoo, Jingyu Park, Dong Hyeop Shin, Su Han Noh, Sae Him Jung, Soohong Eo, Wonjung Kim, Sung Jun Yun, Jae Moon Soh, Yoo Seok Park, Changwook Kim, Dong Myong Kim, Sung‐Jin Choi, Yoon Jung Lee, Ickhyun Song, Dae Hwan Kim   +16 more
wiley   +1 more source

Further evidence of high level of persistence of pediatric bipolar-I disorder from childhood onto young adulthood: a five-year follow up [PDF]

Scandinavian Journal of Child and Adolescent Psychiatry and Psychology, 2018
Janet Wozniak, Rebecca Wolenski, Maura Fitzgerald, Stephen V. Faraone, Gagan Joshi, Mai Uchida, Joseph Biederman   +6 more
doaj   +1 more source

The complex relationships among self-acceptance, perceived social support, drug use stereotype threat, and subthreshold depression in people with substance use disorder: exploring the mediating and buffering effects

Frontiers in Psychiatry
IntroductionDepression levels are significantly higher among people with substance use disorder (SUD) than in the general population; however, studies on the level of subthreshold depression in this population are scarce.
Yongqiu Li, Rufang Wang, Jun Liu, Zuoliang Li, Yinghua Zhou   +4 more
doaj   +1 more source

SUBTHRESHOLD AUDITORY ADAPTATION

Nippon Jibiinkoka Gakkai Kaiho, 1965
The author observed the abnormal auditory adaptation by using subthreshold stimulus in the subjects with perceptive hearing loss, in which the threshold of the continuous tone was more increased than that of the interrupted tone in fixed rfequency Bekesy audiometry. The experimental procedures were as follows : 1.
openaire   +2 more sources

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source