Results 141 to 150 of about 64,809 (293)

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

Advanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli   +7 more
wiley   +1 more source

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

Advanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo, Songhyun Kim, Sanghoon Park, Hanul Moon, Seunghyup Yoo   +4 more
wiley   +1 more source

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

Advanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli   +5 more
wiley   +1 more source

Flexible IGZO Field‐Effect Transistor Biosensor Platform for Mechanically Stable and Cortisol Detection

Advanced Electronic Materials, EarlyView.
A flexible indium–gallium–zinc oxide field‐effect transistor platform on polyimide is developed for electrostatic cortisol detection. Wafer‐scale fabricated devices exhibit uniform electrical characteristics and maintain stable operation under mechanical bending.
Ngoc Thanh Ho, Sina Jamali, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +3 more
wiley   +1 more source

Metal Cation Chemistry and Amorphous Structure Governing Hydrogen Tolerance in Oxide Semiconductor Channels for 3D DRAM

Advanced Electronic Materials, EarlyView.
Amorphous In–Sn–Ga–O channels are presented as hydrogen‐tolerant oxide semiconductors for DRAM‐relevant thermal processes. Systematic comparisons of ternary oxides separate elemental and crystallinity effects under 400–600°C H2 annealing. Sn incorporation and amorphous structure suppress thickness loss and enable field‐effect transistors to retain ...
Seong‐Hwan Ryu, Sun Myung Lee, Kwang‐Hee Lee, Jee‐Eun Yang, Sangwook Kim, Jin‐Seong Park   +5 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Do all adolescents benefit equally from school-based mental health interventions? A subgroup analysis by depression severity at 12 and 18 months follow-up. [PDF]

Front Psychiatry
Duagi D, Carter B, Lisk S, Brown JSL.
europepmc   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization

Advanced Intelligent Systems, EarlyView.
Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee, Jun‐Young Park, Joon‐Kyu Han, Sungho Kim   +3 more
wiley   +1 more source