Results 211 to 220 of about 141,240 (252)

InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

2019 Device Research Conference (DRC), 2019
Low InP/dielectric interface trap density $D_{\mathrm{it}}$ will enable low subthreshold swings $(SS)$ in mm-wave MOSFETs [1] using InGaAs/InP composite channels [2] for increased breakdown and in tunnel FETs (TFETs) [3] using InAs/InP heterojunctions [4] for increased tunneling probability. Reducing $D_{\mathrm{it}}$ at the etched InP mesa edges
Hsin-Ying Tseng, Yihao Fang, Shibo Zhong, Mark J.W. Rodwell   +3 more
openaire   +1 more source

Nanotube Tunneling FET With a Core Source for Ultrasteep Subthreshold Swing: A Simulation Study

IEEE Transactions on Electron Devices, 2019
In this article, we propose a novel nanotube (NT) tunneling field-effect transistor with a core source (CSNT-TFET) which uses line tunneling. We systematically investigate the CSNT-TFET with the help of calibrated 3-D simulations and demonstrate that it ...
Gaurav Musalgaonkar, Shubham Sahay, R. Saxena, M. J. Kumar   +3 more
semanticscholar   +1 more source

Analytical expressions for subthreshold swing in FDSOI MOS structures

Solid-State Electronics, 2018
Abstract New analytical expressions for the subthreshold swing in FDSOI structures operated in both front gate and bottom gate modes are developed. These new equations (9)-(10) provide an accurate description of the subthreshold swing SW as a function of the main FDSOI stack parameters (film thickness, front gate thickness, back gate oxide thickness)
Ghibaudo, G., Pananakakis, G.
openaire   +2 more sources

Junction technologies for devices with steep subthreshold swing

2009 International Workshop on Junction Technology, 2009
In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on ...
openaire   +1 more source

Analytical Model of Subthreshold Swing in Triangular-Shaped FinFET

2019 Devices for Integrated Circuit (DevIC), 2019
FinFET, a quasi-planar device has gained tremendous importance in the semiconductor industry because it has the ability to suppress all the short-channel effects. The silicon fin of FinFET can be of different shapes-rectangular, trapezoidal, triangular, convex, concave etc.
Subham Banerjee, Buddhadev Pradhan
openaire   +1 more source

Vertical-dual-source tunnel FETs with steeper subthreshold swing

Journal of Semiconductors, 2016
In order to improve the drive current and subthreshold swing (SS), a novel vertical-dual-source tunneling field-effect transistor (VDSTFET) device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling
Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu   +4 more
openaire   +1 more source

A Novel Step-Channel TFET for Better Subthreshold Swing and Improved Analog/RF Characteristics

2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
In this paper, a novel device structure is introduced to enhance ON-state current, reduce ambipolar behaviour and better subthreshold swing which is named as step channel tunnel FETs (SC-TFET). This device use small dielectric thickness at source-channel
Sachin Kumar, D. Yadav, Somya Saraswat, Nitish Parmar, Ritwik Sharma, Atul Kumar   +5 more
semanticscholar   +1 more source

Determination of Ultrathin Oxide Thickness by Subthreshold Swing

Japanese Journal of Applied Physics, 2002
Thickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0–5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O2.
openaire   +1 more source

Design analysis of GOS-HEFET on lower Subthreshold Swing SOI

Analog Integrated Circuits and Signal Processing, 2021
Due to various kind of Band-To-Band Tunneling (BTBT) operation, Heterojunction Tunnel Field Effect Transistors (HEFETs) are widely used in ultralow power applications. Anyhow, circuit complexity is a major issue in case of HEFET based memory development because of their uncomfortable size. Device scaling is a better way to eliminate such kind of issues
B. V. V. Satyanarayana, M. Durga Prakash
openaire   +1 more source

Variation of the Efficiency of GaN Junctionless FinFET based Boost Converter with Subthreshold Swing as a Unified Device Parameter

IEEE Electron Devices Technology and Manufacturing Conference, 2020
We enumerate the subthreshold swing of a GaN (junctionless FinFET) switching device for wide variation in device parameters and temperature, generating around 120 discrete data points in parameter space.
S. Mukherjee, D. Saha, A. Laha, S. Ganguly   +3 more
semanticscholar   +1 more source