Results 221 to 230 of about 141,240 (252)

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

IEEE Electron Device Letters, 2019
High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer are fabricated based on a conventional high- ${\kappa }$ metal gate FinFETs fabrication flow. The devices
Zhaohao Zhang, Gaobo Xu, Qingzhu Zhang, Zhaozhao Hou, Junjie Li, Z. Kong, Yongkui Zhang, J. Xiang, Qiuxia Xu, Zhenhua Wu, Huilong Zhu, H. Yin, Wenwu Wang, Tianchun Ye   +13 more
semanticscholar   +1 more source

Realizing steep subthreshold swing with Impact Ionization Transistors

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009
Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature.
openaire   +1 more source

Modeling of MOSFET subthreshold swing mismatch with BSIM4 Model

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016
In this paper, we propose a methodology to model the MOSFET subthreshold swing, S mismatch by using BSIM4 model. The 0.18µm CMOS technology silicon data show two trends in the swing mismatch plot. For large-size devices (larger than a critical area A C ), the subthreshold swing behaves in a linear trend with smaller slope compared to small-size devices.
Xing Er Bee, Mohamad Marzuki Bin Mohd Fauzi, Philip Beow Yew Tan   +2 more
openaire   +1 more source

A simple subthreshold swing model for short channel MOSFETs

Solid-State Electronics, 2001
Abstract A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which
A. Godoy, J.A. López-Villanueva, J.A. Jiménez-Tejada, A. Palma, F. Gámiz   +4 more
openaire   +1 more source

Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Nanotechnology, 2019
In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses.
Yu Pan, K. Jia, Kailiang Huang, Zhenhua Wu, G. Bai, Jiahan Yu, Zhaohao Zhang, Qingzhu Zhang, H. Yin   +8 more
semanticscholar   +1 more source

Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs

Journal of Computational Electronics, 2015
Quasi-3D models of subthreshold current and subthreshold swing for Dual-Metal Quadruple-Gate (DMQG) MOSFETs are presented in this paper. Equivalent number of gates (ENGs) concept has been utilized to calculate the effective natural length $$\lambda _{DMQG}$$?DMQG of DMQG MOSFETs in spite of solving three-dimensional (3D) Poisson's equation.
Visweswara Rao Samoju, Sarvesh Dubey, Pramod Kumar Tiwari   +2 more
openaire   +1 more source

A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation

IEEE Electron Device Letters, 2019
In this letter, a novel negative capacitance tunnel FET (NC-TFET) design based on junction depleted-modulation is proposed and experimentally demonstrated with sub-60mV/dec subthreshold swing (SS).
Yang Zhao, Zhongxin Liang, Qianqian Huang, Cheng Chen, Mengxuan Yang, Zixuan Sun, K. Zhu, Huimin Wang, Shuhan Liu, Tianyi Liu, Yue Peng, G. Han, Ru Huang   +12 more
semanticscholar   +1 more source

Low Subthreshold Swing Double-Gate $\beta$ -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

IEEE Electron Device Letters, 2019
We demonstrate low subthreshold swing (SS) double-gate (DG) $\beta $ -Ga2O3 field-effect transistors (FETs) with polycrystalline hafnium oxide (HfO2) gate dielectrics.
Jiyeon Ma, G. Yoo
semanticscholar   +1 more source

Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs

Journal of Computational Electronics, 2016
A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator metal---oxide---semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution and physical conduction path concept.
Hamdam Ghanatian, Seyed Ebrahim Hosseini
openaire   +1 more source

Negative Capacitance Oxide Thin-Film Transistor With Sub-60 mV/Decade Subthreshold Swing

IEEE Electron Device Letters, 2019
In this letter, we demonstrate an integrated negative capacitance oxide thin-film transistor (NC-OTFT) based on ferroelectric Hf0.5Zr0.5O2 (HfZrO) film. The buried-gated TiN/HfZrO/Al2O3 structure is developed with indium zinc oxide as its channel.
Yu-xing Li, R. Liang, Jiabin Wang, Chunsheng Jiang, Benkuan Xiong, Houfang Liu, Zhibo Wang, Xuefeng Wang, Yu Pang, H. Tian, Yi Yang, T. Ren   +11 more
semanticscholar   +1 more source