Results 131 to 140 of about 130,098 (261)

Daytime SO2 chemistry on ubiquitous urban surfaces as a source of organic sulfur compounds in ambient air. [PDF]

open access: yesSci Adv, 2022
Deng H   +12 more
europepmc   +1 more source

Tailor‐Made Protective LixAlSy Layer for Lithium Anodes to Enhance the Stability of Solid‐State Lithium–Sulfur Batteries

open access: yesAdvanced Materials Interfaces, EarlyView.
An intentionally added, chemically formed LixAlSy coating stabilizes the lithium–electrolyte interface in solid‐state Li–S batteries. The layer suppresses side reactions, preserves smooth charge transfer, and improves ion transport from the start. This approach offers a practical route to more durable solid‐state batteries and a clearer understanding ...
Xinyi Wang   +4 more
wiley   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

open access: yesAdvanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan   +9 more
wiley   +1 more source

Identification of Volatile Sulfur Compounds Produced by Schizophyllum commune. [PDF]

open access: yesJ Fungi (Basel), 2021
Toyotome T   +4 more
europepmc   +1 more source

Radiation‐Matter Interaction in Chemical Vapor Deposition‐Grown Two‐Dimensional Tungsten Disulfide

open access: yesAdvanced Materials Interfaces, EarlyView.
Gamma irradiation tunes the magnetic properties of CVD‐grown WS2 material. Moderate irradiation doses induce low‐temperature ferromagnetic‐like behavior, whereas higher doses suppress the magnetic response because of increased defect formation. These findings provide insight into defect‐mediated magnetism in 2D TMDs and could be relevant to future ...
Mongur Hossain   +3 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Home - About - Disclaimer - Privacy