Gallium Nitride Semiconductor Resonant Tunneling Transistor
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu +15 more
wiley +1 more source
Superposition Operator in a Space of Infinitely Differentiable Functions
Mario Romeo
openalex +2 more sources
Admissible initial operators for superpositions of right invertible operators [PDF]
openaire +2 more sources
Mathematical Prediction for Geometry‐Mediated Cell 3D In‐Growth on Bone Tissue Engineering Scaffolds
This study identifies a fundamental pore size dependent pattern of three dimensional bone marrow derived mesenchymal stem cell (BMSC) infiltration within porous scaffolds, where small pores promote horizontal cellular bridging and large pores facilitate vertical migration.
Xiang Gao +15 more
wiley +1 more source
Femtosecond spectroscopy with paired single photons: Emulating a double-slit experiment in the time-frequency domain. [PDF]
Hong E, Jang E, Kim J.
europepmc +1 more source
Infinitely many solutions for nonlinear superposition operators of mixed fractional order involving critical exponent [PDF]
Shubhankar Bhowmick +2 more
openalex +1 more source
Physical Origin of Temperature Induced Activation Energy Switching in Electrically Conductive Cement
The temperature‐induced Arrhenius activation energy switching phenomenon of electrical conduction in electrically conductive cement originates from structural degradation within the biphasic ionic‐electronic conduction architecture and shows percolation‐governed characteristics: pore network opening dominates the low‐percolation regime with downward ...
Jiacheng Zhang +7 more
wiley +1 more source
Superposition operator on the space of sequences almost converging to zero
Alekhno Egor
doaj +1 more source
Quantum Information Supports Delayed Decisions. [PDF]
Nagy M, Nagy N.
europepmc +1 more source
Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim +11 more
wiley +1 more source

