Results 121 to 130 of about 1,442,659 (301)

Impact of Customer Retention Strategies on the Corporate Performance of Supermarkets in Nigeria

open access: yesIlorin Journal of Administration and Development
The study investigated how switching barriers and loyalty rewards affected corporate performance in the Nigerian supermarket sector. The rising competition in retail demanded knowledge about how these strategies affected customer loyalty levels together
Kolade Akinpelu Ayobami   +2 more
doaj  

Exploring the Role of Code-Switching in Multilingual Classroom Dynamics: A Comparative Study of Attitudes and Practices among University Students in the Philippines

open access: yesJPAIR
This study investigates the usage and attitudes towards code-switching among university students in the Philippines, focusing on its role in promoting inclusive and equitable education.
Mario Maranan   +2 more
doaj   +1 more source

Two-stage index computation for bandits with switching penalties II : switching delays [PDF]

open access: yes
This paper addresses the multi-armed bandit problem with switching penalties including both costs and delays, extending results of the companion paper [J. Niño-Mora.
Jose Nino-Mora
core  

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska   +5 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

open access: yesAdvanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han   +6 more
wiley   +1 more source

Sliding and superlubric moiré twisting ferroelectric transition in HfO2

open access: yesnpj Computational Materials
Despite progress in HfO2 thin-film ferroelectrics, issues like high coercive fields persist, and the dynamics of twisted ferroelectricity remain largely unexplored.
Jie Sun   +3 more
doaj   +1 more source

Regime switching GARCH models [PDF]

open access: yes
We develop univariate regime-switching GARCH (RS-GARCH) models wherein the conditional variance switches in time from one GARCH process to another. The switching is governed by a time-varying probability, specified as a function of past information.
Luc, BAUWENS   +2 more
core  

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

open access: yesAdvanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh   +3 more
wiley   +1 more source

Interface barrier-driven memristive switching in Al2O3/BFO heterostructures for advanced memory applications

open access: yesMemories - Materials, Devices, Circuits and Systems
In this study, Pt/BiFeO3/Al2O3/ITO heterostructures are fabricated using a sputtering technique, and the role of the interface barrier in influencing the resistive switching (RS) mechanism is investigated.
Shah Zahid Yousuf   +2 more
doaj   +1 more source

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