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Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage
IEEE transactions on power electronics, 2023GaN high electron mobility transistors (HEMTs) have limited avalanche capability and usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BVdyn).
J. P. Kozak +7 more
semanticscholar +1 more source
Study on Switching Overvoltage in Off-Shore Wind Farms
IEEE Transactions on Applied Superconductivity, 2014Tao Zhang, L. Sun, Yin Zhang
exaly +2 more sources
IEEE transactions on power electronics, 2023
Transient voltage overshoot is a common phenomenon in GaN high electron mobility transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric instability under such stress is a critical concern for GaN applications.
Ruizhe Zhang +4 more
semanticscholar +1 more source
Transient voltage overshoot is a common phenomenon in GaN high electron mobility transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric instability under such stress is a critical concern for GaN applications.
Ruizhe Zhang +4 more
semanticscholar +1 more source
Overvoltage Robustness of p-Gate GaN HEMTs in High Frequency Switching up to Megahertz
IEEE transactions on power electronics, 2023This article investigates the ruggedness of the GaN high electron mobility transistor (HEMT), a power device without avalanche capability, in continuous, high-frequency, overvoltage switching.
Ruizhe Zhang +3 more
semanticscholar +1 more source
IEEE Transactions on Power Delivery, 2023
A valve-side single-phase-to-ground (VSSPG) fault in the converter station of the modular multilevel converter based high voltage direct current (MMC-HVDC) integrated offshore wind farms causes DC overvoltage.
Hongyu Zhou +5 more
semanticscholar +1 more source
A valve-side single-phase-to-ground (VSSPG) fault in the converter station of the modular multilevel converter based high voltage direct current (MMC-HVDC) integrated offshore wind farms causes DC overvoltage.
Hongyu Zhou +5 more
semanticscholar +1 more source
Research on Switching Overvoltage of No-load Transformer with Long Cable
2020 2nd International Conference on Smart Power & Internet Energy Systems (SPIES), 2020In order to find out the regular and influencing factors of switching overvoltage in the process of power plant grid connection, so as to provide technical basis for the operation mode of switching on no-load transformer with long cable in the later ...
Ren Hongtao
semanticscholar +1 more source
IEEE Transactions on Power Delivery, 2020
The development of a revolutionary design for transmission lines was recently introduced by shifting phase configurations and sub-conductors into “unconventional” arrangements that were geometrically optimized to maximize natural power.
J. Hernández-Ramírez +4 more
semanticscholar +1 more source
The development of a revolutionary design for transmission lines was recently introduced by shifting phase configurations and sub-conductors into “unconventional” arrangements that were geometrically optimized to maximize natural power.
J. Hernández-Ramírez +4 more
semanticscholar +1 more source
Journal of Applied Physics, 2023
Due to the erratic switching phenomenon of the Si avalanche bipolar junction transistor (ABJT) in the Marx bank circuit (MBC), an explanation of the leakage current trigger mode in the overvoltage state with a lack of displacement current is proposed ...
Kaijun Wen +4 more
semanticscholar +1 more source
Due to the erratic switching phenomenon of the Si avalanche bipolar junction transistor (ABJT) in the Marx bank circuit (MBC), an explanation of the leakage current trigger mode in the overvoltage state with a lack of displacement current is proposed ...
Kaijun Wen +4 more
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Simulation Study on Restrain Strategy for No-load Switching Overvoltage of UHV Transmission Line
2020 IEEE/IAS Industrial and Commercial Power System Asia (I&CPS Asia), 2020UHV transmission lines are characterized by small distributed resistance and inductance, large distributed capacitance, long transmission lines, etc., and their overvoltage is more serious.
Lifang Wang +5 more
semanticscholar +1 more source
IEEE transactions on power electronics, 2022
This article presents quick analytical prediction methods of switching loss, turn-on/off overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based on device datasheet.
Chengjin Qian +3 more
semanticscholar +1 more source
This article presents quick analytical prediction methods of switching loss, turn-on/off overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based on device datasheet.
Chengjin Qian +3 more
semanticscholar +1 more source