Results 31 to 40 of about 1,432 (200)

Insulation stresses of power equipment exposed to non-standard overvoltage waveforms [PDF]

open access: yesZbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2022
During its operation, electrical equipment is constantly exposed to overvoltages of various waveforms, such as lightning discharges, switching operations, faults, etc.
Jasika Ranko   +2 more
doaj   +1 more source

Study on internal overvoltages of 220 kV submarine cable transmission system of the offshore oil–gas field group

open access: yesEnergy Reports, 2022
Since the Electromagnetic Transient (EMT) process of the high-voltage submarine cable has a great influence on the safe and stable operation of the transmission system, it is necessary to analyze its EMT process under actual engineering.
Han Li   +3 more
doaj   +1 more source

Investigation on overvoltage caused by vacuum circuit breaker switching off shunt reactor in offshore wind farms

open access: yesHigh Voltage, 2022
The multiple reignitions of vacuum circuit braker (VCB) while switching off the shunt reactor in an offshore wind farm (OWF) would produce a high overvoltage. The post‐arc process of ion movement in the vacuum interrupter is analysed.
Zhi Zheng   +5 more
doaj   +1 more source

GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure?

open access: yes, 2023
GaN high-electron-mobility transistors (HEMTs) have no avalanche capability and are known to fail electrically when the transient overvoltage reaches their dynamic breakdown voltage (BVDYN).
Li, Qiang   +3 more
core   +1 more source

Mitigation of Motor Overvoltage in SiC-Device-Based Drives using a Soft-Switching Inverter [PDF]

open access: yes, 2020
In SiC motor drives, the high-voltage slew rate (dv/dt) of switching transients results in excessive motor overvoltage, due to the reflected wave phenomenon (RWP), which stands behind the premature failure of motor winding insulation while raises ...
Xibo Yuan   +5 more
core   +2 more sources

GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery

open access: yes, 2022
The overvoltage and surge energy robustness of GaN power high-electron-mobility transistors (HEMTs) is a key gap recently identified by the JEDEC JC-70.1 committee.
Smith, Kurt V.   +9 more
core   +1 more source

A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs

open access: yesEnergies, 2019
A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
doaj   +1 more source

Electromagnetic transient suppression for thyristor switch‐based auto‐passing neutral section system

open access: yesIET Power Electronics, 2023
The auto‐passing neutral section (ANS), applied in the traction substation or section post (SP), is one of the effective methods to improve the continuity of power supply, and the electromagnetic transient is the key issue impacting its application value.
Wu Liran   +3 more
doaj   +1 more source

Overvoltage Robustness of p-Gate GaN HEMTs in High Frequency Switching up to Megahertz

open access: yes, 2023
This article investigates the ruggedness of the GaN high electron mobility transistor (HEMT), a power device without avalanche capability, in continuous, high-frequency, overvoltage switching.
Li, Qiang   +7 more
core   +1 more source

Field Experiments on 10 kV Switching Shunt Capacitor Banks Using Ordinary and Phase-Controlled Vacuum Circuit Breakers

open access: yesEnergies, 2016
During the switching on/off of shunt capacitor banks in substations, vacuum circuit breakers (VCBs) are required to switch off or to switch on the capacitive current.
Wenxia Sima   +4 more
doaj   +1 more source

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