Results 171 to 180 of about 266,135 (309)

The SNARE Proteins SNAP25 and Synaptobrevin Are Involved in Endocytosis at Hippocampal Synapses [PDF]

open access: bronze, 2013
Zhen Zhang   +6 more
openalex   +1 more source

Piezoelectric Stimulation of Neural Cells: Exploring the Synergistic Potential of Hybrid Scaffolds for Enhanced Regeneration

open access: yesAdvanced Materials Interfaces, EarlyView.
Hybrid piezoelectric scaffolds offer a promising route for Central Nervous System regeneration by combining structural and electrical cues to support neural stem cell growth. This review highlights their potential to overcome current challenges in neural tissue engineering by exploring porous hybrid materials, their biological interactions, and ...
Heather F. Titterton   +2 more
wiley   +1 more source

Cholesterol‐DNA Origami Nanostructures for Synthetic Lipid Rafts Induce Early T Cell Activation Signals

open access: yesAdvanced Materials Interfaces, EarlyView.
Here, we present a nanotechnology approach to construct synthetic lipid rafts on the live T cell membrane, leveraging a versatile DNA origami‐enabled platform named as the “cholesterol nano‐patch” (CNP). Our investigation highlights the effectiveness of DNA nanotechnology in exploring the impact of nanoscale arrangement of cholesterols on the ...
Yunmin Jung   +4 more
wiley   +1 more source

Influence de PD-1 sur la synapse immunologique [PDF]

open access: bronze, 2013
Martin Larsen   +2 more
openalex   +1 more source

Combinatorial Screening for Europium Induced Defect Engineering in Titania Anodic Memristors

open access: yesAdvanced Materials Interfaces, EarlyView.
A Ti‐Eu thin‐film combinatorial libary (3‐17 at.% Eu) was fabricated by co‐sputtering and anodisation. Systematic screening revealed forming‐free memristors with analog switching, with compositions between 7‐17 at.% Eu showing improved endurance and multilevel resistive states.
Elena Atanasova   +5 more
wiley   +1 more source

Lead‐Free Bismuth Halide Perovskite Memristors: Low‐Voltage Switching and Physical Modeling of Resistive Hysteresis

open access: yesAdvanced Materials Technologies, EarlyView.
Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim   +4 more
wiley   +1 more source

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