Results 251 to 260 of about 454,876 (378)

Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport

open access: yesAdvanced Electronic Materials, EarlyView.
This paper presents a dual‐layer device integrating neuronal and synaptic functions using a conductive bottom layer (MXenes or rGO) and a gallium oxide top layer. The device demonstrates distinct switching behaviors—volatile (neuronal) and gradual (synaptic)—depending on the configuration.
Suji Ha   +6 more
wiley   +1 more source

MicroRNA-138-5p suppresses excitatory synaptic strength at the cerebellar input layer. [PDF]

open access: yesJ Physiol
Delvendahl I   +6 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

Inhibitory specificity from a connectomic census of mouse visual cortex. [PDF]

open access: yesNature
Schneider-Mizell CM   +40 more
europepmc   +1 more source

Stereotypic morphology of glutamatergic synapses on identified muscle cells of Drosophila larvae [PDF]

open access: hybrid, 1989
Jørgen Johansen   +3 more
openalex   +1 more source

Tripartite synapses: astrocytes process and control synaptic information

open access: yesTrends in Neurosciences, 2009
G. Perea, M. Navarrete, A. Araque
semanticscholar   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

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