Brain-inspired ferroelectric Si nanowire synaptic device [PDF]
APL Materials, 2021 We herein demonstrate a brain-inspired synaptic device using a poly(vinylidene fluoride) and trifluoroethylene (PVDF-TrFE)/silicon nanowire (Si NW) based ferroelectric field effect transistor (FeFET). The PVDF-TrFE/Si NW FeFET structure achieves reliable
M. Lee +8 more
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Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network [PDF]
Scientific Reports, 2019 Brain-inspired neuromorphic systems (hardware neural networks) are expected to be an energy-efficient computing architecture for solving cognitive tasks, which critically depend on the development of reliable synaptic weight storage (i.e., synaptic ...
Sungho Kim, Hee-Dong Kim, Sung-Jin Choi
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Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm. [PDF]
Adv Sci (Weinh), 2023 Analog in‐memory computing synaptic devices are widely studied for efficient implementation of deep learning. However, synaptic devices based on resistive memory have difficulties implementing on‐chip training due to the lack of means to control the ...
Won J +18 more
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npj 2D Materials and Applications, 2022 With an increasing demand for artificial intelligence, the emulation of the human brain in neuromorphic computing has led to an extraordinary result in not only simulating synaptic dynamics but also reducing complex circuitry systems and algorithms.
Muhammad Naqi +8 more
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Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device. [PDF]
Nanomaterials (Basel), 2021 In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Khan SA +5 more
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Ion-Movement-Based Synaptic Device for Brain-Inspired Computing [PDF]
Nanomaterials, 2022 As the amount of data has grown exponentially with the advent of artificial intelligence and the Internet of Things, computing systems with high energy efficiency, high scalability, and high processing speed are urgently required.
Chansoo Yoon, Gwangtaek Oh, Bae Ho Park
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Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device. [PDF]
Nanomaterials (Basel), 2020 Here, we propose a Pt/HfO2/TaOx/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO2/TaOx/TiN) information deposited by DC sputtering and atomic layer ...
Ryu H, Kim S.
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Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application
IEEE Journal of the Electron Devices Society, 2021 In this work, a synaptic device for neuromorphic system is proposed and designed to emulate the biological behaviors in the novel device structure of core-shell dual-gate (CSDG) nanowire flash memory.
Md. Hasan Raza Ansari +3 more
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Advanced Electronic MaterialsIn this study, the resistive switching phenomenon and synaptic mimicry characteristics of an indium tin oxide (ITO)/indium zinc oxide (IZO)/Al2O3/TaN device are characterized.
Hyogeun Park +5 more
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Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications. [PDF]
Nanomaterials (Basel), 2020 Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaOx/HfO2) was fabricated, and its synaptic applications ...
Ryu H, Kim S.
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