Results 31 to 40 of about 929 (167)

Volatile Resistive Switching Characteristics of Pt/HfO₂/TaO_x/TiN Short-Term Memory Device

Metals, 2021
In this work, we study the threshold switching and short-term memory plasticity of a Pt/HfO2/TaOx/TiN resistive memory device for a neuromorphic system.
Hojeong Ryu, Sungjun Kim
doaj   +1 more source

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

Advanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee, Hyoik Jang, Myeongjin An, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application

APL Materials
Annealing improves the switching and synaptic performance of ITO/WOx/CuOx/ITO transparent devices. The device has low SET and RESET voltages, stable and robust AC endurance of up to 106 cycles, and can retain the states for more than 104 s.
Hans Juliano, Stephen Ekaputra Limantoro, Firman M. Simanjuntak, Tseung-Yuen Tseng   +3 more
doaj   +1 more source

Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices

IEEE Journal of the Electron Devices Society, 2019
We propose a designing of multi-layer neural networks using 2D NAND flash memory cell as a high-density and reliable synaptic device. Our operation scheme eliminates the waste of NAND flash cells and allows analogue input values.
Sung-Tae Lee, Suhwan Lim, Nag Yong Choi, Jong-Ho Bae, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee   +6 more
doaj   +1 more source

All-Optical Synapse With Directional Coupler Structure Based on Phase Change Material

IEEE Photonics Journal, 2021
With the rapid growth of the artificial neural network, the operational efficiency of von Neumann computing architecture is limited by the separation of memory and processor, and the exploration of the efficient hardware mimicking bionic neurons and ...
Yong Zhang, Danyang Yao, Yan Liu, Cizhe Fang, Shulong Wang, Guosheng Wang, Yan Huang, Xiao Yu, Genquan Han, Yue Hao   +9 more
doaj   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots

Nanomaterials
The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices.
Shuqiong Lan, Jinkui Si, Wangying Xu, Lan Yang, Jierui Lin, Chen Wu   +5 more
doaj   +1 more source

Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

Results in Physics, 2019
The massively parallel computing capabilities of the human brain can be mimicked with the help of neuromorphic computing approach and this can be achieved by developing the electronic synaptic device.
Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam, Harshada S. Patil, Snehal L. Patil, Aishwarya V. Pawar, Sharon S. Kanapally, Dhanashri V. Desai, Shraddha M. Bodake, Rajanish K. Kamat, Sungjun Kim, Tukaram D. Dongale   +11 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source