Results 211 to 220 of about 84,713 (260)

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

Advanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter   +12 more
wiley   +1 more source

Controllable Charge Storability in InP/ZnSe Core/Shell Quantum Dots toward Bioinspired Optical Synaptic Application. [PDF]

Adv Sci (Weinh)
Wen G, Huo B, Zheng D, Zheng X, Ke G, Chi Z, Wu H, Ji B, Sun Z.   +8 more
europepmc   +1 more source

Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors

Advanced Electronic Materials, EarlyView.
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim, Ju‐Hyeok Yun, Hea‐Lim Park, Sin‐Hyung Lee   +3 more
wiley   +1 more source

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices. [PDF]

Nanomicro Lett
Ko EB, Sung J, Choi SY, Hassan Y, Bae JJ, Kim J, Kim HY, Lee E, Choi MS, Kim HH.   +9 more
europepmc   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Intrinsically flexible multimode reconfigurable transistors for polymorphic circuits and neuromorphic devices. [PDF]

Nat Commun
Wang W, Qiu R, Zhu J, Zhu T, Wang J, Liu D, Liang J, Wang C, Zhang S, Wang Z, Huang Q, Wang X, Zhang M.   +12 more
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

A Van Der Waals Broadband Infrared Optical Synapse Enabling Orientation Detection. [PDF]

Adv Sci (Weinh)
Guo D, Li W, Gu P, Dong W, Rui X, Watanabe K, Taniguchi T, Ye Y, Zheng F, Zhou J, Zheng S.   +10 more
europepmc   +1 more source

Metaplastic synaptic behaviour operational in FM devices

The dependence of the switching probability on the MI state of the gate will be evaluated for each of the proposed schemes [UPSaclay, CEITEC]. The device design will be adapted based on the most performing dependences used in metaplastic algorithms and based on biological neural models [UPSaclay, FZJ, UZH, HawAI.tech].
openaire   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source