Results 211 to 220 of about 14,157 (254)

A "high-entropy + dilute" design strategy delivers a strong and ductile refractory alloy from 77 to 1,373 K. [PDF]

open access: yesProc Natl Acad Sci U S A
An Y   +7 more
europepmc   +1 more source

Participation of non-compact dislocation glide in creep of copper at high temperatures

Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing, 2001
Abstract A possible participation of dislocation glide in non-compact crystal planes of copper in the high temperature creep process is assessed by means of values of activation energy. The activation energy of creep was determined alternatively from conventional data analysis, from the concept of effective and internal stresses applied to steady ...
Alena Orlova
exaly   +2 more sources

Temperature Distribution in the Gliding Arc Discharge Chamber

Journal of Advanced Oxidation Technologies, 2011
AbstractLow temperature, non-equilibrium plasma was generated during gliding arc discharge in a multi-electrode reactor at atmospheric pressure. Various diagnostic methods to determine electrons and gas temperature were used. Hot electrons’ temperature has been determined by optical spectroscopy.
Henryka Danuta Stryczewska   +2 more
openaire   +1 more source

Electrode temperature measurement of low temperature gliding arc discharge device

2017 International Conference on Electromagnetic Devices and Processes in Environment Protection with Seminar Applications of Superconductors (ELMECO & AoS), 2017
Gliding arc discharge has been widely used in various applications. However, both the gas temperature and the electrode temperature rapidly increase. Therefore, an apparatus was fabricated considering that the effective heat transfer from the electrode to the gas which could suppress the temperature increase of the electrode by raising the forced ...
Keita Shuto   +4 more
openaire   +1 more source

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

Journal of Alloys and Compounds, 2020
Abstract The expansion of single-layer Shockley-type stacking faults (SSFs) in 4H-SiC under low energy electron beam irradiation has been studied in the temperature range from 80 to 300 K. It is shown that the SSF expansion can be observed even at 80 K.
E.E. Yakimov, E.B. Yakimov
openaire   +1 more source

Temperature dependence of the flow stress in secondary glide planes of cadmium single crystals

Physica Status Solidi (a), 1971
The stress–strain curves of cadmium single crystals were determined for both primary and secondary glide planes directly in shear arrangement at temperatures between 77 and 393 °K. The slip system with the next higher flow stress compared with the basal glide is the second pyramidal glide 〈1123〉 {1122}.
J. Rrásová, P. Kbatochvíl
openaire   +1 more source

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