Results 61 to 70 of about 246,481 (370)

Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides [PDF]

, 2008
We describe the design of a silicon-based source for radiation in the 0.5-14 THz regime. This new class of devices will permit continuously tunable, milliwatt scale, cw, room temperature operation, a substantial advance over currently available ...
Baehr-Jones, T., Hochberg, M., Scherer, A., Soref, Richard   +3 more
core   +1 more source

Secure Communication Channels Using Atmosphere-Limited Line-of-Sight Terahertz Links

IEEE Transactions on Terahertz Science and Technology, 2022
Terahertz wireless links offer great promise for realizing physical-layer security due to the high directionality and the high path loss. In this work, we investigate the resilience against eavesdropping attacks in a directional terahertz link which ...
Z. Fang, H. Guerboukha, R. Shrestha, M. Hornbuckle, Yasith Amarasinghe, D. Mittleman   +5 more
semanticscholar   +1 more source

Coherent terahertz photonics

Optics Express, 2013
We present a review of recent developments in THz coherent systems based on photonic local oscillators. We show that such techniques can enable the creation of highly coherent, thus highly sensitive, systems for frequencies ranging from 100 GHz to 5 THz, within an energy efficient integrated platform.
Alwyn J. Seeds, Martyn J. Fice, Katarzyna Balakier, Michele Natrella, Oleg Mitrofanov, Marco Lamponi, Mourad Chtioui, Frederic van Dijk, Michael Pepper, Gabriel Aeppli, A. Giles Davies, Paul Dean, Edmund Linfield, Cyril C. Renaud   +13 more
openaire   +3 more sources

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Nanoscale Research Letters, 2021
In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet
Xingliang Xu, Lin Zhang, Peng Dong, Zhiqiang Li, Lianghui Li, Juntao Li, Jian Zhang   +6 more
doaj   +1 more source

Intense terahertz laser fields on a two-dimensional electron gas with Rashba spin-orbit coupling

, 2004
The spin-dependent density of states and the density of spin polarization of an InAs-based two-dimensional electron gas with the Rashba spin-orbit coupling under an intense terahertz laser field are investigated by utilizing the Floquet states to solve ...
J. L. Cheng, M. W. Wu, Xu J. Z.
core   +1 more source

Extremely large extinction efficiency and field enhancement in terahertz resonant dipole nanoantennas [PDF]

, 2011
The distinctive ability of nanometallic structures to manipulate light at the nanoscale has recently promoted their use for a spectacular set of applications in a wide range of areas of research including artificial optical materials, nano-imaging ...
Al-Naib, Ibraheem A. I., Clerici, Matteo, Das, Gobind, De Angelis, Francesco, Di Fabrizio, Enzo, Falqui, Andrea, Liberale, Carlo, Marras, Sergio, Morandotti, Roberto, Ozaki, Tsuneyuki, Peccianti, Marco, Razzari, Luca, Shalaby, Mostafa, Toma, Andrea, Zaccaria, Remo Proietti   +14 more
core   +1 more source

Wireless Terahertz Communications

2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2019
Over the past years, interest in wireless THz communications with so-called T-waves has tremendously increased [1]–[4], because the large carrier frequencies in the range 0.2 THz to 0.9 THz support wide signal band-widths and consequently large data rates.
Freude, W., Harter, T., Ummethala, S., Muehlbrandt, S., Blaicher, M., Wolf, S., Weber, M., Boes, F., Massler, H., Tessmann, A., Kutuvantavida, Y., Kemal, J. N., Nellen, S., Hahn, L., Globisch, B., Walther, M., Zwick, T., Randel, S., Koos, C.   +18 more
openaire   +4 more sources

Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector [PDF]

, 2012
In a GaN/AlGaN field-effect terahertz detector, the directional photocurrent is mapped in the two-dimensional space of the gate voltage and the drain/source bias.
Cai, Y., Lewis, R. A., Qin, H., Sun, J. D., Sun, Y. F., Wu, D. M., Zhang, B. S., Zhang, X. Y.   +7 more
core   +3 more sources

Polarization dynamics in spin‐VCSELs with integrated surface grating for high birefringence splitting

Electronics Letters, 2023
Polarization dynamics in spin‐polarized vertical‐cavity surface‐emitting lasers (spin‐VCSELs) with high birefringence have recently been demonstrated to offer very high potential for optical data‐transmission systems that outperform their counterparts ...
Markus Lindemann, Natalie Jung, Nicolas Manrique‐Nieto, Tobias Pusch, Rainer Michalzik, Nils C. Gerhardt, Martin R. Hofmann   +6 more
doaj   +1 more source

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

, 2017
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想), Li, Xingxin, Luo, Muchang, Qin, Hua(秦华), Sun, Jiandong(孙建东), Sun, Yunfei(孙云飞), Yu, Yao, Zhang, Zhipeng(张志鹏), 孙建东, 秦华   +9 more
core   +1 more source