Results 41 to 50 of about 2,677,605 (251)

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

open access: yesSensors, 2021
Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub ...
Michael Shur   +3 more
doaj   +1 more source

Plasmonic Terahertz Amplification in Graphene-Based Asymmetric Hyperbolic Metamaterial

open access: yesPhotonics, 2015
We propose and theoretically explore terahertz amplification, based on stimulated generation of plasmons in graphene asymmetric hyperbolic metamaterials (AHMM), strongly coupled to terahertz radiation.
Igor Nefedov, Leonid Melnikov
doaj   +1 more source

Current Status and Challenges in Data Collection for Aerospace Coatings Deposited by Plasma Spraying

open access: yesAdvanced Engineering Materials, EarlyView.
An innovative approach has been integrated into the GRENAT project to optimize plasma spraying and coating performance. Raw materials are accelerated and melted in the plasma generated by torches, creating coatings. Monitoring sensors collect process data which are combined with ex situ characterization data.
Lila Randriamananjara   +8 more
wiley   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies   +2 more
wiley   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella   +11 more
wiley   +1 more source

Microelectromechanical Maltese-cross metamaterial with tunable terahertz anisotropy

open access: yes, 2012
Dichroic polarizers and waveplates exploiting anisotropic materials have vast applications in displays and numerous optical components, such as filters, beamsplitters and isolators. Artificial anisotropic media were recently suggested for the realization
Zhu, W.M.   +8 more
core   +1 more source

Measured and simulated performance of a ceramic micromechanical beam steering device at 94 GHz [PDF]

open access: yes, 2008
We report the first experimental demonstration of a transmission-mode micromechanical beam steering device for use in standoff terahertz imaging and spectroscopy.
Drysdale, T.D.   +5 more
core   +1 more source

Probing Live PN Junctions with Terahertz Waves

open access: yes, 2023
It is known that the reflectivity of semiconductor materials at terahertz frequencies is sensitive to changes in free carriers. This phenomenon has been rigorously studied with semiconductor wafers and offline semiconductor devices.
Lees, H.   +3 more
core   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

open access: yesAdvanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert   +11 more
wiley   +1 more source

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