Results 161 to 170 of about 10,498 (226)
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IEEE Transactions on Electron Devices, 2022
A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article.
A. Singh, M. Tripathy, K. Baral, S. Jit
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A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article.
A. Singh, M. Tripathy, K. Baral, S. Jit
semanticscholar +1 more source
IEEE Transactions on Electron Devices, 2021
This article investigates the applicability of dual-material gate-oxide-stack double-gate tunnel field effect transistor (DMGOSDG-TFET) as a biosensing element with the ability to assess the health parameters and disease onset.
Km. Sucheta Singh +2 more
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This article investigates the applicability of dual-material gate-oxide-stack double-gate tunnel field effect transistor (DMGOSDG-TFET) as a biosensing element with the ability to assess the health parameters and disease onset.
Km. Sucheta Singh +2 more
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Sensitivity Measurement for Bio-TFET Considering Repulsive Steric Effects With Better Accuracy
IEEE transactions on nanotechnology, 2022Sensitivity analysis of label free Bio-TFET considering repulsive steric effects (RSEs) has been addressed in the paper. Doping-less underlap dielectric modulating tunnel field effect transistor (DU-DM-TFET) is assumed like a reference structure ...
Amit Bhattacharyya, D. De, M. Chanda
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Journal of Micromechanics and Microengineering, 2022
In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal source pocket tunnel field-effect transistor (DM-TMGOS-ZHP-TFET) structure has been investigated for the application of label free-biosensor.
N. N. Reddy, D. Panda
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In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal source pocket tunnel field-effect transistor (DM-TMGOS-ZHP-TFET) structure has been investigated for the application of label free-biosensor.
N. N. Reddy, D. Panda
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A FoM for Investigation of SB TFET Biosensor Considering Non-Ideality
IEEE transactions on nanotechnology, 2022A new FoM to investigate a carefully engineered Schottky barrier (SB) TFET by accounting for dc power consumption, and silicon area, which are the key consideration for energy efficiency and cost of the biosensors, is reported in this paper.
Mohd Yusef Iqbal +3 more
semanticscholar +1 more source
IEEE Sensors Journal, 2021
Dielectrically-modulated Tunneling-Field-Effect-Transistor (TFET) based biosensor has been given a major deal of interest since it promises a high sensitivity but low current during the detection process.
M. K. Anvarifard, Z. Ramezani, I. Amiri
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Dielectrically-modulated Tunneling-Field-Effect-Transistor (TFET) based biosensor has been given a major deal of interest since it promises a high sensitivity but low current during the detection process.
M. K. Anvarifard, Z. Ramezani, I. Amiri
semanticscholar +1 more source
Semiconductor Science and Technology, 2022
In this paper, the complementary charge-plasma (CP) based symmetrical-gate electron–hole bilayer (EHB) tunnel field-effect transistor (TFET) at a low operating voltage (⩽0.5 V) is introduced. Where, by using CP technique, the source/drain and EHB-channel
Aadil Anam +4 more
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In this paper, the complementary charge-plasma (CP) based symmetrical-gate electron–hole bilayer (EHB) tunnel field-effect transistor (TFET) at a low operating voltage (⩽0.5 V) is introduced. Where, by using CP technique, the source/drain and EHB-channel
Aadil Anam +4 more
semanticscholar +1 more source
Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET
IEEE Transactions on Electron Devices, 2021In this article, a device called GaAs/InAs/Ge junctionless tunnel field-effect transistor (JL-TFET) is proposed and investigated by a numerical simulator.
M. Vadizadeh
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Comparative Analysis of Double Gate TFET and Hetero Dielectric Double Gate TFET
2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC), 2018This paper compares and analyzes the performance of Hetero Dielectric Double Gate TFET (HD-DG TFET) with that of conventional DG-TFET using TCAD simulation. This paper reports the influence of various hetero dielectric materials and source doping concentrations on drain current. A low leakage current (IOFF) is observed with an improved on current and a
Sushree Anusmita Sahu +2 more
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3T-TFET bitcell based TFET-CMOS Hybrid SRAM design for Ultra-Low Power Applications
Proceedings of the 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2016This paper presents a TFET/CMOS hybrid SRAM architecture designed to address the requirements for ULP (Ultra-Low Power) applications, like IoT (Internet of Things). A novel 3-Transistor TFET SRAM cell is used for array while CMOS for periphery. The simulation extractions for power and speed are done including wiring and device parasitic capacitance ...
Gupta, Navneet +4 more
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