Results 171 to 180 of about 10,498 (226)
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Novel TFET circuits for high-performance energy-efficient heterogeneous MOSFET/TFET logic
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017TFET's steep subthreshold slope and asymmetric I DS -V DS characteristics enable energy-efficiency and novel circuits that are not possible with MOSFETs. Logic with low-V DD and memory with low-V MIN are required and possible with TFET.
Daniel H. Morris +5 more
openaire +1 more source
16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell
2016 46th European Solid-State Device Research Conference (ESSDERC), 2016This paper presents for the first time a TFET/CMOS hybrid CAM architecture designed to address the requirements for ULP (Ultra-Low Power) applications like the IoT (Internet of Things). Proposed design is low power, area efficient and re-configurable i.e. can either be used as CAM or normal SRAM or as a combination of both.
Gupta, Navneet +4 more
openaire +2 more sources
2020
Cost and power efficiency are an important aspect for applications such as Internet-of-Things (IoT) and Wireless-Sensor Nodes (WSN). In SoCs optimized for these specification, key focus is put on SRAMs and flip-flops as they are the main contributors to area, energy, and leakage.
Navneet Gupta +4 more
openaire +1 more source
Cost and power efficiency are an important aspect for applications such as Internet-of-Things (IoT) and Wireless-Sensor Nodes (WSN). In SoCs optimized for these specification, key focus is put on SRAMs and flip-flops as they are the main contributors to area, energy, and leakage.
Navneet Gupta +4 more
openaire +1 more source
An Optimized Hetrojunction Dopingless TFET
2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR), 2018The concept of dopingless TFET (DL TFET) is an potential solution methodology against problems due to RDFs. However., the low ON-state current ( $I_{ON}$ ) is still a problem in physically doped TFET and it becomes severe for DL TFET due to the existence of barrier at the gap between source and gate electrodes.
A Meera, Nisha Kuruvilla, T E Ayoob Khan
openaire +1 more source
IEEE transactions on nanotechnology, 2020
A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket doped vertical tunnel FET based label-free biosensors is reported in this work.
V. Wangkheirakpam +2 more
semanticscholar +1 more source
A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket doped vertical tunnel FET based label-free biosensors is reported in this work.
V. Wangkheirakpam +2 more
semanticscholar +1 more source
2016
Rapid developments in the TFETs’ process and rising interests in evaluating their potential in low-power circuits/systems require a TFET compact model for SPICE simulations. In this chapter, we discuss the essential device physics of TFETs, propose necessary simplifications of their complex operations, and develop a core model for homojunction TFETs ...
Zhang, Lining, Chan, Man Sun
openaire +2 more sources
Rapid developments in the TFETs’ process and rising interests in evaluating their potential in low-power circuits/systems require a TFET compact model for SPICE simulations. In this chapter, we discuss the essential device physics of TFETs, propose necessary simplifications of their complex operations, and develop a core model for homojunction TFETs ...
Zhang, Lining, Chan, Man Sun
openaire +2 more sources
International journal of numerical modelling, 2021
In this paper, a Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal n+ pocket in the source region is proposed and different performances were investigated.
N. Reddy, D. Panda
semanticscholar +1 more source
In this paper, a Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal n+ pocket in the source region is proposed and different performances were investigated.
N. Reddy, D. Panda
semanticscholar +1 more source
2018
Data has been reported on the analog performance of full silicon devices, silicon-based nanowire TFETs with different source compositions and line-Tunnel field-effect transistor (FET) (TFET). Although the tunnel-FET devices were developed for digital applications, some researchers have demonstrated their potential for analog circuit design. However, it
Marcio Dalla Valle Martino +4 more
openaire +1 more source
Data has been reported on the analog performance of full silicon devices, silicon-based nanowire TFETs with different source compositions and line-Tunnel field-effect transistor (FET) (TFET). Although the tunnel-FET devices were developed for digital applications, some researchers have demonstrated their potential for analog circuit design. However, it
Marcio Dalla Valle Martino +4 more
openaire +1 more source
Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based Biosensor
IEEE Sensors Journal, 2020A dielectric modulated dual channel trench gate tunnel FET (DM-DCTGTFET) based biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET is placed vertically in a trench for creating two channels on both sides of the gate ...
Sandeep Kumar +3 more
semanticscholar +1 more source
Design and Analysis of Dual-Metal-Gate Double-Cavity Charge-Plasma-TFET as a Label Free Biosensor
IEEE Sensors Journal, 2020In this paper, the bipolar nature of tunnel field effect transistor (TFET) has been utilized for the first time for the identification of biomolecules. C harge plasma concept has been employed to achieve simpler process of fabrication, lower cost and to ...
.. Mahalaxmi, B. Acharya, G. P. Mishra
semanticscholar +1 more source