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2022 International Electrical Engineering Congress (iEECON), 2022
Thanet Boonlua +2 more
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Thanet Boonlua +2 more
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Further Insights in TFET Operation
IEEE Transactions on Electron Devices, 2014Based on the band diagram analysis and systematic measurements, comprehensive description of the output characteristics of tunnel FETs (TFETs) operation is proposed. We show that both tunneling junctions have to be considered simultaneously to explain TFET behavior correctly. For the first time, we present and investigate in detail untruncated I D (V
Villalon, Anthony +5 more
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Intrinsic voltage gain of Line-TFETs and comparison with other TFET and MOSFET architectures
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016In this work the intrinsic voltage gain (AV) is for the first time experimentally analyzed for a planar Line-TFETs and its performance is compared with different MOSFET and point TFET architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures.
P. G. D. Agopian +6 more
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IEEE transactions on device and materials reliability, 2020
This paper investigates the impact of different interface trap charges (ITCs) on dual-material gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges (donor/acceptor) at the interface of semiconductor/insulator.
Km. Sucheta Singh +2 more
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This paper investigates the impact of different interface trap charges (ITCs) on dual-material gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges (donor/acceptor) at the interface of semiconductor/insulator.
Km. Sucheta Singh +2 more
semanticscholar +1 more source
2016
As discussed in the previous sections, the SS of the MOSFET governed by the Boltzmann tyranny (herein, the theoretical limit of SS is ~60 mV/decade at 300 K) is a main bottleneck in scaling down the power supply voltage (V DD ) as well as extensively reducing the power consumption in integrated circuits (ICs).
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As discussed in the previous sections, the SS of the MOSFET governed by the Boltzmann tyranny (herein, the theoretical limit of SS is ~60 mV/decade at 300 K) is a main bottleneck in scaling down the power supply voltage (V DD ) as well as extensively reducing the power consumption in integrated circuits (ICs).
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2016
Reducing energy dissipations per function with the integrated circuit (IC) chips is always an appealing research topic. Techniques in the fundamental electronic device levels are being pursued besides of those in the architecture level. In this chapter, we introduce several device candidates with a common feature of steep slope as possible solutions ...
Zhang, Lining, Huang, Jun, Chan, Man Sun
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Reducing energy dissipations per function with the integrated circuit (IC) chips is always an appealing research topic. Techniques in the fundamental electronic device levels are being pursued besides of those in the architecture level. In this chapter, we introduce several device candidates with a common feature of steep slope as possible solutions ...
Zhang, Lining, Huang, Jun, Chan, Man Sun
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Comparison of power and performance for the TFET and MOSFET and considerations for P-TFET
2011 11th IEEE International Conference on Nanotechnology, 2011A detailed circuit assessment of Tunneling Field Effect Transistors (TFET) versus MOSFET transistors operating at a supply voltage near device threshold is reported, including the consideration of P-TFET device design. 20nm gate-length InAs TFET and Si MOSFET device characteristics are simulated and used in circuit simulations.
Uygar E. Avci +3 more
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Realization of Logic Performance using Double Gate TFET (DG-TFET) and Ge source DG-TFET (s-Ge-TFET)
2023 3rd International conference on Artificial Intelligence and Signal Processing (AISP), 2023Hitesh Kumar Phulawariya +3 more
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Heterojunction TFET Scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length
2013 IEEE International Electron Devices Meeting, 2013The Tunneling Field Effect Transistor (TFET) is of interest for future low-power technologies due to its steep subthreshold-slope (SS) [1, 2]. In addition to understanding TFET's prospects for future technology nodes [3], we also need to assess if it enables continued scaling required for increasing transistor density.
Uygar E. Avci, Ian A. Young
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