Results 191 to 200 of about 10,498 (226)

Can Interface Traps Suppress TFET Ambipolarity?

IEEE Electron Device Letters, 2013
The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed.
BETTI BENEVENTI, GIOVANNI, GNANI, ELENA, GNUDI, ANTONIO, REGGIANI, SUSANNA, BACCARANI, GIORGIO   +4 more
openaire   +2 more sources

A Comprehensive Performance Investigation on Junction-Less TFET (JL-TFET) Based Biosensor: Device Structure and Sensitivity

Transactions on Electrical and Electronic Materials, 2023
Jayalakshmi Bitra, Gurumurthy Komanapalli   +1 more
semanticscholar   +1 more source

State-of-the-Art TFET Devices

2020
TFETs are p-i-n gated junctions that operate in reverse regime. Figure 2.1 shows a conceptual TFET structure compared to a CMOS transistor. For an n-type (NTFET), p+ (n+) doping is used for the source (drain) while for a p-type (PTFET) n+ (p+) doping is used for the source (drain), the doping being reversed between the source and the drain as opposed ...
Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel   +4 more
openaire   +1 more source

Design and Performance Analysis of Polarity Control Junctionless TFET (PC-JL-TFET)-Based Biosensor

Journal of Circuits, Systems and Computers
This paper proposes a novel polarity-control junctionless tunnel field-effect transistor (PC-JL-TFET)-based biosensor for the label-free detection of biomolecule species in efficient ways. Unlike conventional designs, the polarity-control concept induces the generation of drain (n[Formula: see text]) and source (p[Formula: see text]) regions inside ...
Mukesh Kumar Bind, Sajai Vir Singh, Kaushal Kumar Nigam   +2 more
openaire   +1 more source

Design and Investigation of Junction-less TFET (JL-TFET) for the Realization of Logic Gates

Nano
The demand for energy-efficient electronics has propelled the exploration of alternative transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered significant interest as compared to MOSFETs, and our main focus is on getting a power-efficient device. This paper presents a comprehensive study on the utilization of TFETs
Bhushit Shah, Prabhat Singh, Ashish Raman, Nagendra Pratap Singh   +3 more
openaire   +1 more source

TFET Integrated Circuits

2021
Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel   +4 more
openaire   +1 more source

SELBOX TFET and DTD TFET for DC and RF/Analog Applications

2022
Puja Ghosh, Brinda Bhowmick
openaire   +1 more source

Simulation Based Investigation of Triple Heterojunction TFET (THJ-TFET) for Low Power Applications

Silicon, 2022
Armstrong Joseph J., G. Adilakshmi, C. R. Rene Robin, S. Vidhya, Bharath Kumar Narukullapati, M. Koti Reddy, T. Ch. Anil Kumar   +6 more
openaire   +1 more source

Implementation of Low Power Inverter using Si1-xGex Pocket N & P-Channel Junction-Less Double Gate TFET

Silicon, 2022
Sabitabrata Bhattacharya, S. Tripathi
semanticscholar   +1 more source

Dopingless-TFET Leaky-Integrated-Fire (LIF) Neuron For High-Speed Energy Efficient Applications

IEEE transactions on nanotechnology, 2022
.. Priyanka, Sangeeta Singh, Meena Panchore   +2 more
semanticscholar   +1 more source