Comparative thermoelastic analysis of semiconductors with an external heat source under three theories. [PDF]
Das B, Islam N, Lahiri A.
europepmc +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source
Effect of rotational field on thermo-acoustic and optical wave propagation in hydrodynamic semiconductors. [PDF]
Alshehri HM, Lotfy K.
europepmc +1 more source
Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus +5 more
wiley +1 more source
Insights into electric- and thermal-induced decomposition and gas evolution of silicone rubber through experiments and molecular simulations. [PDF]
Gong J +6 more
europepmc +1 more source
Dual‐phase MoC/Mo2C/CoNC nanoframes are synthesized via a MOF‐on‐MOF strategy, demonstrating a large salt adsorption capacity, a low energy consumption, and an excellent cycling stability. In situ/ex situ characterizations and DFT calculations reveal that the MoC/Mo2C dual phase transition facilitates Na+ adsorption/desorption, while interface‐induced ...
Feifei Pang +8 more
wiley +1 more source
Correction to Temperature and Bekenstein-Hawking Entropy of Kiselev Black Hole Surrounded by Quintessence. [PDF]
Wang C.
europepmc +1 more source
Shear viscosity of hot QCD from transport theory and thermal field theory in real time formalism [PDF]
Defu Hou
openalex +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source

