Results 21 to 30 of about 2,441 (222)
Photophysics of fullerenes: Thermionic emission [PDF]
AIP Conference Proceedings, 1997 The photoionization of fullerene produced by XeCl pulsed laser is measured as a function of the applied electric field. The intensity of the spectra is attributed to field enhanced thermionic emission. (AIP)
Compton, R. N. +2 more
openaire +1 more source
Temperature dependent electrical behaviour of Cu2SnS3 films
AIP Advances, 2014 The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus √V plot shows two regions. The region at lower bias is due to electrode limited Schottky emission
Sandra Dias, S. B. Krupanidhi
doaj +1 more source
AIP Advances, 2020 An n-type α-Ga2O3 layer was grown by mist chemical vapor deposition on a sapphire substrate, and a Ti/α-Ga2O3 Schottky barrier diode was fabricated. Although the α-Ga2O3 layer has a high threading dislocation density (larger than 109 cm−2), the ideality ...
Takuya Maeda +4 more
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Staggered heterojunction Pentacene/ZnO based organic–inorganic flexible photodetector
Results in Optics, 2023 This article describes the performance analysis of the fabricated visible photodetector based on the Pd/pentacene/ZnO/ITO/PET structure. Hydrothermal and thermal vacuum deposition techniques deposited the ZnO and pentacene films, and FESEM images ...
Mowj R. Sabity, Ghusoon M. Ali
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Photo-thermionic emission and photocurrent dynamics in low crystallinity carbon nanotubes
Journal of Materiomics, 2021 Within this work, it is studied the photo-thermionic and photocurrent behavior of two kinds of carbon nanotube arrays, grown by chemical vapor deposition.
J.A. García-Merino +3 more
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n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Advanced Materials, EarlyView.Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond
Frontiers in Mechanical Engineering, 2017 Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap ...
Franz A. M. Koeck, Robert J. Nemanich
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IEEE Journal of the Electron Devices Society, 2020 In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu +5 more
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Quantitative simulation of electron beam’s focal spot in thermionic emission
AIP Advances, 2023 The focal spot size of an electron beam in x-ray photography lamps, which is formed on the anode, has an important effect on the contrast of x-ray images.
Hadi Teymouri, Mohammad Bagher Fathi
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Advanced Materials, EarlyView.Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source