Results 41 to 50 of about 1,018,400 (245)

The Thermionic Emission from Clean Platinum [PDF]

Physical Review, 1928
The thermionic emission from thoroughly outgassed platinum in high vacuum has been measured to one-half percent over the temperature range 1360 to 1750°K, the temperatures being measured by careful optical pyrometry. The values obtained for the thermionic constants of the T2 law are, when corrected for the Schottky effect, b=72, 820°K, φ=6.27 volts, A ...
openaire   +2 more sources

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Thermionic emission from CVD poly-and nanocrystalline diamond films grown on different substrates

, 2014
CVD diamond represents a very attractive material for the fabrication of devices based on thermionic emission, due to the possibility to achieve a very low or even negative electron affinity (NEA) by a hydrogen surface termination.
E Cappelli, D Sciti, DM Trucchi, G Cicala, A Bellucci, P Calvani, M Girolami, L Silvestroni   +7 more
core   +1 more source

Generalized Electron Emission Theory for One-Dimensional Conducting Materials

Applied Sciences
This research focuses on exploring generalized electron emissions in one-dimensional conducting materials, specifically examining field emission and thermionic emission. Additionally, this study investigates one-dimensional thermal radiation. The current
Heetae Kim, Chang-Soo Park, Soon Jae Yu
doaj   +1 more source

Electrocatalyst/Semiconductor Interfaces in Photoelectrocatalysts: Mechanistic Analysis of the Impact of Nanoparticle Electrocatalyst Coverage on Performance

Advanced Materials, EarlyView.
Reducing Ni nanoparticle coverage on n‐Si photoanodes enhances photovoltage by promoting thicker interfacial SiOx formation during photoelectrochemical oxygen evolution reaction (OER). Experiments, analytical modeling, and finite‐element simulations reveal that coverage‐dependent chemical interface evolution, rather than geometric effects alone ...
Aarti Mathur, Ahmet Sert, Suljo Linic
wiley   +1 more source

Thermionic Emission from Hot Tungsten Clusters

, 1990
We observe thermionic emission from tungsten clusters Wn, n ≥ 5, following excitation by a Q-switched Nd:YAG laser. The ion yield from this process dominates over prompt ionization if the laser fluence is chosen properly.
Olof Echt, K. Athanassenas, T. Leisner, D. Kreisle, E. Recknagel, O. Kandler   +5 more
core   +1 more source

Features of the Mechanisms of Conductivity of the Electrorheological Fluids With Double Doped TiO2 Particles Under External Temperature Effects

Frontiers in Materials, 2019
Electrophysical and rheological characteristics of ER fluids with TiO2 particles doped with aluminum and phosphorus and having anatase structure are considered in an extended temperature range (5–100°C). The mechanisms of leakage currents in the ER fluid
Evguenia V. Korobko, Zoya A. Novikova
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Heliyon, 2020
The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al0.33Ga0.67 As diodes have been examined through the inhomogeneity model on n+-GaAs substrate with orientation.
Noorah Ahmed Al-Ahmadi
doaj   +1 more source

Recent Advances of Slip Sensors for Smart Robotics

Advanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang, Liao Wu, Shuai He, Zhao Sha, Yuwan Huang, Shuying Wu, Dewei Chu, Chun H. Wang, Shuhua Peng   +8 more
wiley   +1 more source