Results 41 to 50 of about 2,441 (222)
Advanced Materials Technologies, EarlyView.An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
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Heliyon, 2020 The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al0.33Ga0.67 As diodes have been examined through the inhomogeneity model on n+-GaAs substrate with orientation.
Noorah Ahmed Al-Ahmadi
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Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode. [PDF]
PLoS ONE, 2012 Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were ...
Shih-Wei Tan, Shih-Wen Lai
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Hot electron electrochemistry at silver activated by femtosecond laser pulses
Opto-Electronic Advances, 2023 A silver microelectrode with a diameter of 30 µm in an aqueous K2SO4 electrolyte was irradiated with 55 fs and 213 fs laser pulses. This caused the emission of electrons which transiently charged the electrochemical double layer.
Oskar Armbruster +2 more
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Advanced Science, EarlyView.ABSTRACT Orthogonal translation systems (OTSs) enable site‐specific incorporation of non‐canonical amino acids (ncAAs) and are central to genetic code expansion. Current engineering strategies typically rely on hyperstable aminoacyl tRNA synthetase (aaRS) scaffolds to tolerate destabilizing mutations required for substrate diversification.
Nikolaj G. Koch +4 more
wiley +1 more source
Frontiers in Mechanical Engineering, 2017 Thermionic energy conversion (TEC) is the direct conversion of heat into electricity by the mechanism of thermionic emission, the spontaneous ejection of hot electrons from a surface.
David B. Go +8 more
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Advanced Science, EarlyView.An atomically precise platform was developed for investigating single‐molecule charge transport. This innovative platform enables the creation of highly uniform molecular devices using ruthenium‐based molecules. It reveals a significant enhancement in molecular conductance due to the metallic ruthenium center and a unique barrier‐lowering effect during
Jie Guo +15 more
wiley +1 more source
Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga2O3 Schottky barrier diodes. The main idea of this method is based on the
A. Latreche
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Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
ITER relevant multi-emissive sheaths at normal magnetic field inclination
Nuclear Fusion, 2022 Reliable modeling of macroscopic melt motion induced by fast transients requires the accurate and computationally efficient description of the emitted current density that escapes to the pre-sheath.
P. Tolias +3 more
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