Results 121 to 130 of about 86,415 (337)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy. [PDF]

Micromachines (Basel), 2023
Pan W, Zhang G, Liu X, Song K, Ning L, Li S, Chen L, Zhang X, Huang T, Yang H, Zhou X, Zhang S, Lu L.   +12 more
europepmc   +1 more source

Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors [PDF]

, 2023
Minho Yoon
openalex   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

Environmental Effects on the Performance of Small‐Molecule Organic Thin‐Film Transistors

Advanced Materials Interfaces
Electrical measurements are performed on a bottom‐gate bottom‐contact organic thin‐film transistor with 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene (diF‐TES ADT) (diF‐TES ADT) as the active layer, varying the relative humidity of the ...
Zafrullah Jagoo, L.E. McNeil
doaj   +1 more source

Artificial Retina using Thin-Film Photodiode and Thin-Film Transistor [PDF]

, 2006
Mutsumi Kimura, Takehiro Shima, Takehiko Yamashita   +2 more
openalex   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

Advanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun, Min Gyeong Shin, Uje Choi, Jieun Yeon, Jae Joon Kim, Yangjin Lee, Kwanpyo Kim   +6 more
wiley   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

Integrated Water-Level Sensor Using Thin-Film Transistor Technology. [PDF]

ACS Omega, 2023
Moon SJ, Han YL, Hwang SH, Kang SJ, Lee JM, Bae BS.   +5 more
europepmc   +1 more source