Results 251 to 260 of about 21,510 (298)
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Microelectronics Reliability, 2002
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N. +2 more
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It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N. +2 more
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An adaptive thin film transistor
1966 International Electron Devices Meeting, 1966A thin film transistor (TFT) is described and demonstrated whose transfer characteristic can be reversibly adapted by a short duration voltage pulse applied to a high impedance gate electrode. The device is a four terminal-two gate structure: A source, drain, and insulator gate contact form the basic TFT while the amount of polarity of the polarization
S.S. Perlman, K.H. Ludewig
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Chemical Society Reviews, 2010
Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Advanced Materials, 2009
AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
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AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
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Solvent-gated thin-film-transistors
Physical Chemistry Chemical Physics, 2017TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.
Kyriaki Manoli +6 more
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Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor
Japanese Journal of Applied Physics, 1995We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film
Kwangsoo Choi +1 more
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2015
Thin-film transistors (TFTs) are key elements for thin film electronics, being their most significant application the pixel switching elements on flat panel displays (FPDs). Semiconductor materials enabling faster TFTs, such as lowtemperature polycrystalline silicon (LTPS) or transparent semiconducting oxides (TSOs), hold the promise of expanding TFT ...
Ana Paula Pinto Correia +2 more
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Thin-film transistors (TFTs) are key elements for thin film electronics, being their most significant application the pixel switching elements on flat panel displays (FPDs). Semiconductor materials enabling faster TFTs, such as lowtemperature polycrystalline silicon (LTPS) or transparent semiconducting oxides (TSOs), hold the promise of expanding TFT ...
Ana Paula Pinto Correia +2 more
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An Analytical Model for Cylindrical Thin-Film Transistors
IEEE Transactions on Electron Devices, 2007In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results.
S. LOCCI +3 more
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Thin-film transistors on a-Si:H
IEEE Transactions on Electron Devices, 1982A comparison has been made of the characteristics of nitride and oxide MOSFET's fabricated with thin films of amorphous silicon. Published data indicate that Si 3 N 4 -Si:H thin film devices are superior to the oxide devices. Accumulation-mode MOSFET's were fabricated in which the drain current arises from electric-field induced accumulation of ...
M.J. Thompson +3 more
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Polysilicon Thin Film Transistors
MRS Proceedings, 1990AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing.
Ichio Yudasaka, Hiroyuki Ohshima
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