Results 251 to 260 of about 87,352 (336)

Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites

Advanced Science, EarlyView.
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren, Xi Zhang, Yicheng Wang, Shuai Wang, Zhi Wang, Yumeng Li, Jikai Yang, Xin Wang, Weijun Chen, Yining Mu   +9 more
wiley   +1 more source

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer. [PDF]

Nanomaterials (Basel), 2020
Yen TJ, Chin A, Gritsenko V.
europepmc   +1 more source

Simulation of Digital Circuits based on Amorphous Indium Gallium Oxide Thin Film Transistors.

, 2010
Shridevi Lothey
openalex   +1 more source

Multidimensional and Multifunctional Laser‐Induced Graphene (LIG) for Point‐of‐Care and Wearable Biosensing, Theranostics, and Bioactive Interfaces Toward Personalized Healthcare and Regenerative Medicine

Advanced Science, EarlyView.
Multidimensional laser‐induced graphene (LIG) spanning from 0D to 3D architectures is comprehensively reviewed for multifunctional biomedical platforms, including biosensing, theranostics, and bioactive interface applications, which highlights its potentials for point‐of‐care diagnostics, wearable health monitoring, smart drug delivery, and tissue ...
Li Zhang, Yurou Yuan, Xiaohong Ding, Wing Cheung Mak   +3 more
wiley   +1 more source

Thin Film Transistor

SHINKU, 1964
openaire   +2 more sources

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Optimization of Low-Temperature Solution-Processed Antimony Tin Oxide Thin-Film Field-Effect Transistor Fabrication Procedure for Neuromorphic Applications

Alexander Zabolotnii
openalex   +2 more sources

Study on Solution Processed Indium-Yttrium-Oxide Thin-Film Transistors Using Poly (Methyl Methacrylate) Passivation Layer

, 2017
Han-Sang Kim, 김성진
openalex   +2 more sources

Optimizing Metal‐Perovskite Interfaces: Electronic and Transport Properties of Au‐Bromide Perovskites Contacts

Advanced Electronic Materials, EarlyView.
This study examines metal–perovskite interfaces in 2D (BA)2PbBr4 and (PEA)2PbBr4 using first‐principles and NEGF methods. It compares top‐ and edge‐contact configurations, revealing Schottky barriers in top contacts and ohmic behavior in edge contacts.
Xinbiao Wang, Qi Zhang, Jing Li, Ji‐Sang Park, Yiming Yang, Letian Dou, Euyheon Hwang   +6 more
wiley   +1 more source