Results 191 to 200 of about 83,993 (296)

Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors. [PDF]

Nat Commun
Kim KD, Ryoo SK, Yeom MK, Lee SH, Choi W, Kim Y, Choi JH, Xin T, Cheng Y, Hwang CS.   +9 more
europepmc   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors. [PDF]

Sci Rep
Oh CE, Jeong HS, Lee SH, Lee HW, Son DH, Kim CH, Kim MH, Son KS, Lim JH, Song SH, Kwon HI.   +10 more
europepmc   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Inkjet printing of amorphous indium aluminum oxide active layers for high-performance thin-film transistors. [PDF]

Sci Rep
Kang J, Wang K.
europepmc   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Kang M, Cho K, Kim S.
europepmc   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Perovskite Thin-Film Transistors for Ultra-Low-Voltage Neuromorphic Visions. [PDF]

Adv Sci (Weinh)
Rong Y, Yu, Zhang X, Wang T, Wang J, Li Y, Zhao T, He R, Gao Y, Huang C, Xiao S, Qin J, Bai S, Zhu H, Liu A, Chen Y, Song Q.   +16 more
europepmc   +1 more source

Optimizing Metal‐Perovskite Interfaces: Electronic and Transport Properties of Au‐Bromide Perovskites Contacts

Advanced Electronic Materials, EarlyView.
This study examines metal–perovskite interfaces in 2D (BA)2PbBr4 and (PEA)2PbBr4 using first‐principles and NEGF methods. It compares top‐ and edge‐contact configurations, revealing Schottky barriers in top contacts and ohmic behavior in edge contacts.
Xinbiao Wang, Qi Zhang, Jing Li, Ji‐Sang Park, Yiming Yang, Letian Dou, Euyheon Hwang   +6 more
wiley   +1 more source