Results 211 to 220 of about 83,993 (296)

Fabrication of Sol Gel Solution-Based Zinc-Tin Oxide/Carbon Nanotube Hybrid Thin-Film for Thin-Film Transistors. [PDF]

Micromachines (Basel)
Kim YJ, Choi WS.
europepmc   +1 more source

Scalable Wheat Bran‐Algae Composites for Edible Electronics with Spray‐Coated Food‐Grade Conductive Inks

Advanced Electronic Materials, EarlyView.
A fully edible wheat bran–algae substrate is fabricated through scalable mould‐compression and spray‐coating, enabling robust, food‐grade platforms for sustainable electronics. A chitosan barrier improves water resistance and ink compatibility, while activated‐carbon conductive films form uniform electrodes with Ohmic behaviour.
Jaz Johari, Muhua Zhu, Zhiging Wang, Yichen Lang, Georgios Nikiforidis, Mingqing Wang, Mengyan Nie, Shahab Akhavan   +7 more
wiley   +1 more source

Molecule upgrading metal-semiconductor buried contacts for high-performance and high-ideality single-crystal organic thin-film transistors. [PDF]

Natl Sci Rev
Wang Y, Deng W, Shi X, Ren X, Li B, Li Y, Jie J, Zhang X, Zhang X.   +8 more
europepmc   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Correction to "Enrichment of 1.0 Nanometer Diameter Single-Chirality Single-Walled Carbon Nanotubes Dictated by Conjugated Polymer Characteristics: Implications for High-Performance Thin-Film Transistors". [PDF]

ACS Appl Nano Mater
Ouyang J, Shin H, Finnie P, Ding J, Li Z, Mirka B, Malenfant PRL.   +6 more
europepmc   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Stability Improvement of Solution-Processed Metal Oxide Thin-Film Transistors Using Fluorine-Doped Zirconium Oxide Dielectric. [PDF]

Materials (Basel)
Xu H, Deng B, Zhang X.
europepmc   +1 more source

Toward Stable and High‐Performance Metal Halide Perovskite Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This ToC illustrates the evolution from unstable 3D perovskites with ion migration toward advanced 2D, mixed‐halide, and vacancy‐ordered structures, culminating in stable, high‐performance perovskite field‐effect transistors. ABSTRACT There is a critical need for high‐quality perovskite semiconductor films to enable highly stable field‐effect ...
Muhammad Danish Danial bin Zulkifli, Goutham Raj Perumallapelli, Maria Vasilopoulou, Muhammad Nafie bin Jakariah, Muhammad Fazri bin Jasmin, Aliff Muhaimin bin Kamaruzaman, Abd. Rashid bin Mohd Yusoff, Ravindra Naik Bukke   +7 more
wiley   +1 more source

Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer. [PDF]

Nano Converg
Lee Y, Lee HW, Kim SJ, Park JM, Lee BH, Kang CG.   +5 more
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source